A direct measurement of electromigration induced drift velocity in Cu dual damascene interconnects

M. Y. Yan*, King-Ning Tu, A. V. Vairagar, S. G. Mhaisalkar, Ahila Krishnamoorthy

*Corresponding author for this work

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

A dual damascene structure with an additional 25 nm Ta diffusion barrier embedded into the upper Cu layer was fabricated to measure the drift velocity of electromigration. The embedded diffusion barrier layer successfully confined void growth into a long and regular shape between the SiN layer and embedded Ta layer. Edge depletion was observed to initiate from the cathode end and elongate into a long and regular shape due to the confinement of the intermediate Ta diffusion barrier layer. With this test structure, electromigration induced drift displacement can be accurately measured with a linear dependence on time. Measurement was conducted at a series of temperatures to obtain the Cu/capping interface diffusion controlled activation energy.

Original languageEnglish
Pages (from-to)1392-1395
Number of pages4
JournalMicroelectronics Reliability
Volume46
Issue number8
DOIs
StatePublished - 1 Aug 2006

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