A delta-doped quantum well system with additional modulation doping

Dong Sheng Luo, Li Hung Lin*, Yi Chun Su, Yi Ting Wang, Zai Fong Peng, Shun-Tsung Lo, Kuang Yao Chen, Yuan Huei Chang, Jau Yang Wu, Yiping Lin, Sheng-Di Lin, Jeng Chung Chen, Chun Feng Huang, Chi Te Liang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

A delta-doped quantum well with additional modulation doping may have potential applications. Utilizing such a hybrid system, it is possible to experimentally realize an extremely high two-dimensional electron gas (2DEG) density without suffering inter-electronic-subband scattering. In this article, the authors report on transport measurements on a delta-doped quantum well system with extra modulation doping. We have observed a 0-10 direct insulator-quantum Hall (I-QH) transition where the numbers 0 and 10 correspond to the insulator and Landau level filling factor ν = 10 QH state, respectively. In situ titled-magnetic field measurements reveal that the observed direct I-QH transition depends on the magnetic component perpendicular to the quantum well, and the electron system within this structure is 2D in nature. Furthermore, transport measurements on the 2DEG of this study show that carrier density, resistance and mobility are approximately temperature (T)-independent over a wide range of T. Such results could be an advantage for applications in T-insensitive devices.

Original languageEnglish
JournalNanoscale Research Letters
Volume6
Issue number1
DOIs
StatePublished - 1 Jan 2011

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