A deep-submicrometer raised source/drain LDD structure fabricated using hot-wall epitaxy

J. E. Moon, C. Galewski, T. Garfinkel, M. Wong, W. G. Oldham, P. K. Ko, Chen-Ming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An elevated LDD (ELDD) structure has been designed, fabricated, and evaluated. A hot-wall reactor was used to selectively grow epitaxial silicon in the regions adjacent to the gate. The ELDD devices were equivalent to TOPS and LDD devices in current drive capability. The hot-electron reliability of the ELDD devices was superior to that of LDD devices. A general comparison among alternative LDD structures is given in terms of critical performance and reliability criteria. The ELDD structure is shown to be a promising candidate for deep-submicrometer applications.

Original languageEnglish
Title of host publication1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers, VTSA 1991
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages117-121
Number of pages5
ISBN (Electronic)078030036X, 9780780300361
DOIs
StatePublished - 1 Jan 1991
Event1991 International Symposium on VLSI Technology, Systems, and Applications, VTSA 1991 - Taipei, Taiwan
Duration: 22 May 199124 May 1991

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
ISSN (Print)1930-8868

Conference

Conference1991 International Symposium on VLSI Technology, Systems, and Applications, VTSA 1991
CountryTaiwan
CityTaipei
Period22/05/9124/05/91

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    Moon, J. E., Galewski, C., Garfinkel, T., Wong, M., Oldham, W. G., Ko, P. K., & Hu, C-M. (1991). A deep-submicrometer raised source/drain LDD structure fabricated using hot-wall epitaxy. In 1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers, VTSA 1991 (pp. 117-121). [246698] (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VTSA.1991.246698