A DC-isolated gate drive IC with drive-by-microwave technology for power switching devices

Shuichi Nagai*, Noboru Negoro, Takeshi Fukuda, Nobuyuki Otsuka, Hiroyuki Sakai, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

37 Scopus citations

Abstract

Outstanding GaN-based HFETs (HFET: Heterojunction Field-Effect Transistors) [1] power devices are expected to replace all Si power devices in high power applications such as inverter systems due to their excellent performance. In order to exploit the full potential of such emerging GaN power devices, the gate driver that controls the device by a pulse width modulation (PWM) signal is becoming more important. The vital function of the gate driver is to provide an isolated gate signal against the reference source voltage that operates at high voltage. In addition to this function, their integration with GaN power HFETs is also desirable to achieve smaller system size, lower cost and user-friendliness. Although there are several signal isolation techniques for a gate driver such as to use a photo-coupler and wireless pulse transformer [2], these techniques have disadvantages such as large system size and difficulty in integration. Other bootstrap or charge pump techniques [3] in high voltage gate drivers (HVIC) have been developed to generate a reference voltage, but the driver can only be used in particular applications such as inverters. Meanwhile, we have focused our attention on the recent technology of wireless power transmission using an electromagnetic resonant coupler (EMRC) [4] with an open-ring resonator [5], which is very attractive due to its high efficiency in power transmission and its compactness at high frequency.

Original languageEnglish
Title of host publication2012 IEEE International Solid-State Circuits Conference, ISSCC 2012 - Digest of Technical Papers
Pages404-405
Number of pages2
DOIs
StatePublished - 11 May 2012
Event59th International Solid-State Circuits Conference, ISSCC 2012 - San Francisco, CA, United States
Duration: 19 Feb 201223 Feb 2012

Publication series

NameDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Volume55
ISSN (Print)0193-6530

Conference

Conference59th International Solid-State Circuits Conference, ISSCC 2012
CountryUnited States
CitySan Francisco, CA
Period19/02/1223/02/12

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