A D-band passive imager in 65 nm CMOS

Qun Jane Gu*, Zhiwei Xu, Adrian Tang, Mau-Chung Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

19 Scopus citations

Abstract

Adifferential D-band (140 GHz) passive imager has been demonstrated in a 65 nm CMOS technology. It achieves a minimum noise equivalent power of 26 fW/√Hz with peak responsivity of 1.2 MV/W. The core circuit consumes chip area of 950 × 240 μm 2 with dc power consumption of 152 mW. This work further pushes imagers in CMOS technology working towards higher millimeter wave/sub millimeter wave frequencies.

Original languageEnglish
Article number6186796
Pages (from-to)263-265
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume22
Issue number5
DOIs
StatePublished - 24 Apr 2012

Keywords

  • CMOS
  • d-band
  • detector
  • passive Imager

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