A Cu-Metallized InGaP/GaAs heterojunction bipolar transistor with reliable Pd/Ge/Cu ohmic contact for power applications

Jui Chien Huang, Yueh Chin Lin, Yu Ling Tseng, Ke Shian Chen, Po Chin Lu, Mong E. Lin, Edward Yi Chang

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

A Cu-metallized InGaP/GaAs heterojunction bipolar transistor (HBT) using a Pd/Ge/Cu n-type ohmic contact, a Pt/Ti/Pt/Cu p-type ohmic contact, and a Ti/Pt/Cu interconnect has been fabricated for power applications. The 4 × 20 μm2 HBT had an output power of 11.25 dBm with a power-added efficiency of 35.1%. After applying current-accelerated stress for 24h, the current gain remained larger than 125. The device was also annealed at 200°C for 24 h, and showed a slight decrease in output power from 10.06 to 9.83 dBm. The results demonstrated that reliable Cu metallization can be used for fabricating InGaP/GaAs HBTs for power applications.

Original languageEnglish
Article number020215
JournalJapanese journal of applied physics
Volume49
Issue number2 Part 1
DOIs
StatePublished - 1 Feb 2010

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