A Cu metalized power InGaP/GaAs heterojuction bipolar transistor with Pd/Ge/Cu alloyed ohmic contact

S. P. Wang; Y. C. Lin; Y. L. Tseng; K. S. Chen; J. C. Huang; Edward Yi Chang

A Cu metalized power InGaP/GaAs heterojuction bipolar transistor with Pd/Ge/Cu alloyed ohmic contact

S. P. Wang, Y. C. Lin, Y. L. Tseng, K. S. Chen, J. C. Huang, Edward Yi Chang

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

The Cu-metalized InGaP/GaAs HBTs using Pd/Ge/Cu ohmic contact to n-type GaAs, Pt/Ti/Pt ohmic contact to p+-type GaAs, and Ti/Pt/Cu for interconnect metals with Pt as the diffusion barrier has been successfully fabricated for power application. The Pd/Ge/Cu metal structure forms a low contact resistance ohmic contact to n-type GaAs with a low specific contact resistivity of 5.73 × 10^-7 Ω-cm2 after annealed at 250 °C for 20 minutes. The 4 × 20μm² Cu-metalized InGaP/GaAs HBTs demonstrated a power of 10.06dBm with power efficiency of 35.6%.

Original language	English
Title of host publication	2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009
State	Published - 1 Dec 2009
Event	2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009 - Tampa, FL, United States Duration: 18 May 2009 → 21 May 2009

Publication series

Name	2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009

Conference

Conference	2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009
Country	United States
City	Tampa, FL
Period	18/05/09 → 21/05/09

Keywords

Cu
HBT
InGaP
Ohmic contact
Power

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Wang, S. P., Lin, Y. C., Tseng, Y. L., Chen, K. S., Huang, J. C., & Chang, E. Y. (2009). A Cu metalized power InGaP/GaAs heterojuction bipolar transistor with Pd/Ge/Cu alloyed ohmic contact. In 2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009 (2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009).

Wang, S. P. ; Lin, Y. C. ; Tseng, Y. L. ; Chen, K. S. ; Huang, J. C. ; Chang, Edward Yi. / A Cu metalized power InGaP/GaAs heterojuction bipolar transistor with Pd/Ge/Cu alloyed ohmic contact. 2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009. 2009. (2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009).

@inproceedings{38694e68f10b4460b065e0caf2d82c05,

title = "A Cu metalized power InGaP/GaAs heterojuction bipolar transistor with Pd/Ge/Cu alloyed ohmic contact",

abstract = "The Cu-metalized InGaP/GaAs HBTs using Pd/Ge/Cu ohmic contact to n-type GaAs, Pt/Ti/Pt ohmic contact to p+-type GaAs, and Ti/Pt/Cu for interconnect metals with Pt as the diffusion barrier has been successfully fabricated for power application. The Pd/Ge/Cu metal structure forms a low contact resistance ohmic contact to n-type GaAs with a low specific contact resistivity of 5.73 × 10-7 Ω-cm2 after annealed at 250 °C for 20 minutes. The 4 × 20μm2 Cu-metalized InGaP/GaAs HBTs demonstrated a power of 10.06dBm with power efficiency of 35.6%.",

keywords = "Cu, HBT, InGaP, Ohmic contact, Power",

author = "Wang, {S. P.} and Lin, {Y. C.} and Tseng, {Y. L.} and Chen, {K. S.} and Huang, {J. C.} and Chang, {Edward Yi}",

year = "2009",

month = dec,

day = "1",

language = "English",

isbn = "189358013X",

series = "2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009",

booktitle = "2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009",

note = "null ; Conference date: 18-05-2009 Through 21-05-2009",

}

Wang, SP, Lin, YC, Tseng, YL, Chen, KS, Huang, JC & Chang, EY 2009, A Cu metalized power InGaP/GaAs heterojuction bipolar transistor with Pd/Ge/Cu alloyed ohmic contact. in 2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009. 2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009, 2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009, Tampa, FL, United States, 18/05/09.

A Cu metalized power InGaP/GaAs heterojuction bipolar transistor with Pd/Ge/Cu alloyed ohmic contact. / Wang, S. P.; Lin, Y. C.; Tseng, Y. L.; Chen, K. S.; Huang, J. C.; Chang, Edward Yi.

2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009. 2009. (2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - A Cu metalized power InGaP/GaAs heterojuction bipolar transistor with Pd/Ge/Cu alloyed ohmic contact

AU - Wang, S. P.

AU - Lin, Y. C.

AU - Tseng, Y. L.

AU - Chen, K. S.

AU - Huang, J. C.

AU - Chang, Edward Yi

PY - 2009/12/1

Y1 - 2009/12/1

N2 - The Cu-metalized InGaP/GaAs HBTs using Pd/Ge/Cu ohmic contact to n-type GaAs, Pt/Ti/Pt ohmic contact to p+-type GaAs, and Ti/Pt/Cu for interconnect metals with Pt as the diffusion barrier has been successfully fabricated for power application. The Pd/Ge/Cu metal structure forms a low contact resistance ohmic contact to n-type GaAs with a low specific contact resistivity of 5.73 × 10-7 Ω-cm2 after annealed at 250 °C for 20 minutes. The 4 × 20μm2 Cu-metalized InGaP/GaAs HBTs demonstrated a power of 10.06dBm with power efficiency of 35.6%.

AB - The Cu-metalized InGaP/GaAs HBTs using Pd/Ge/Cu ohmic contact to n-type GaAs, Pt/Ti/Pt ohmic contact to p+-type GaAs, and Ti/Pt/Cu for interconnect metals with Pt as the diffusion barrier has been successfully fabricated for power application. The Pd/Ge/Cu metal structure forms a low contact resistance ohmic contact to n-type GaAs with a low specific contact resistivity of 5.73 × 10-7 Ω-cm2 after annealed at 250 °C for 20 minutes. The 4 × 20μm2 Cu-metalized InGaP/GaAs HBTs demonstrated a power of 10.06dBm with power efficiency of 35.6%.

KW - Cu

KW - HBT

KW - InGaP

KW - Ohmic contact

KW - Power

UR - http://www.scopus.com/inward/record.url?scp=84887477379&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84887477379

SN - 189358013X

SN - 9781893580138

T3 - 2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009

BT - 2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009

Y2 - 18 May 2009 through 21 May 2009

ER -