A Cu metalized power InGaP/GaAs heterojuction bipolar transistor with Pd/Ge/Cu alloyed ohmic contact

S. P. Wang, Y. C. Lin, Y. L. Tseng, K. S. Chen, J. C. Huang, Edward Yi Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The Cu-metalized InGaP/GaAs HBTs using Pd/Ge/Cu ohmic contact to n-type GaAs, Pt/Ti/Pt ohmic contact to p+-type GaAs, and Ti/Pt/Cu for interconnect metals with Pt as the diffusion barrier has been successfully fabricated for power application. The Pd/Ge/Cu metal structure forms a low contact resistance ohmic contact to n-type GaAs with a low specific contact resistivity of 5.73 × 10-7 Ω-cm2 after annealed at 250 °C for 20 minutes. The 4 × 20μm2 Cu-metalized InGaP/GaAs HBTs demonstrated a power of 10.06dBm with power efficiency of 35.6%.

Original languageEnglish
Title of host publication2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009
StatePublished - 1 Dec 2009
Event2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009 - Tampa, FL, United States
Duration: 18 May 200921 May 2009

Publication series

Name2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009

Conference

Conference2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009
CountryUnited States
CityTampa, FL
Period18/05/0921/05/09

Keywords

  • Cu
  • HBT
  • InGaP
  • Ohmic contact
  • Power

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    Wang, S. P., Lin, Y. C., Tseng, Y. L., Chen, K. S., Huang, J. C., & Chang, E. Y. (2009). A Cu metalized power InGaP/GaAs heterojuction bipolar transistor with Pd/Ge/Cu alloyed ohmic contact. In 2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009 (2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009).