@inproceedings{38694e68f10b4460b065e0caf2d82c05,
title = "A Cu metalized power InGaP/GaAs heterojuction bipolar transistor with Pd/Ge/Cu alloyed ohmic contact",
abstract = "The Cu-metalized InGaP/GaAs HBTs using Pd/Ge/Cu ohmic contact to n-type GaAs, Pt/Ti/Pt ohmic contact to p+-type GaAs, and Ti/Pt/Cu for interconnect metals with Pt as the diffusion barrier has been successfully fabricated for power application. The Pd/Ge/Cu metal structure forms a low contact resistance ohmic contact to n-type GaAs with a low specific contact resistivity of 5.73 × 10-7 Ω-cm2 after annealed at 250 °C for 20 minutes. The 4 × 20μm2 Cu-metalized InGaP/GaAs HBTs demonstrated a power of 10.06dBm with power efficiency of 35.6%.",
keywords = "Cu, HBT, InGaP, Ohmic contact, Power",
author = "Wang, {S. P.} and Lin, {Y. C.} and Tseng, {Y. L.} and Chen, {K. S.} and Huang, {J. C.} and Chang, {Edward Yi}",
year = "2009",
month = dec,
day = "1",
language = "English",
isbn = "189358013X",
series = "2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009",
booktitle = "2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009",
note = "null ; Conference date: 18-05-2009 Through 21-05-2009",
}