A Cu-based alloyed Ohmic contact system on n -type GaAs

Ke Shian Chen*, Edward Yi Chang, Chia Ching Lin, Cheng Shih Lee, Wei Ching Huang, Ching Ting Lee

*Corresponding author for this work

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Abstract

An alloyed PdGeCu Ohmic contact to n -type GaAs is reported for the first time. The PdGeCu Ohmic contact exhibited a very low specific contact resistance of 5.73× 10-7 cm2 at a low annealing temperature of 250 °C. This result is comparable to the reported PdGe and AuGeNi Ohmic contact systems to n -type GaAs with doping concentrations about 1× 1018 cm-3. The Ohmic contact formation mechanisms and microstructure evolution were investigated using secondary ion mass spectrometry, x-ray diffraction, transmission electron microscopy, and energy dispersive spectrometer. The Ohmic contact behavior was related to the formation of Cu3 Ge and Pd Gax Asy compounds after annealing.

Original languageEnglish
Article number233511
JournalApplied Physics Letters
Volume91
Issue number23
DOIs
StatePublished - 14 Dec 2007

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    Chen, K. S., Chang, E. Y., Lin, C. C., Lee, C. S., Huang, W. C., & Lee, C. T. (2007). A Cu-based alloyed Ohmic contact system on n -type GaAs. Applied Physics Letters, 91(23), [233511]. https://doi.org/10.1063/1.2819687