A comprehensive transport model for high performance HEMTs considering the parasitic resistance and capacitance effects

C. M. Hung; K. C. Li; E. R. Hsieh; C. T. Wang; C. I. Kou; Edward Yi Chang; Steve S. Chung

doi:10.1109/SNW.2014.7348617

A comprehensive transport model for high performance HEMTs considering the parasitic resistance and capacitance effects

C. M. Hung, K. C. Li, E. R. Hsieh, C. T. Wang, C. I. Kou, Edward Yi Chang, Steve S. Chung

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

HEMT suffers from parasitic resistance (R _sd ) and capacitance(C _gd ) effects with the shrinking of channel length, leading to degraded performance in logic and RF applications. A new while simple method to extract parasitic RC has been proposed to construct accurate transport parameters in HEMTs. In comparison to the constant-R _sd method, this new voltage dependent method provides more convincing results, especially for very short channel devices. On the other hand, an accurate C _gd correction method has also been incorporated to adequately represent the mobility. Finally, a guideline to design high performance HEMTs has been proposed.

Original language	English
Title of host publication	2014 Silicon Nanoelectronics Workshop, SNW 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479956777
DOIs	https://doi.org/10.1109/SNW.2014.7348617
State	Published - 4 Dec 2015
Event	Silicon Nanoelectronics Workshop, SNW 2014 - Honolulu, United States Duration: 8 Jun 2014 → 9 Jun 2014

Publication series

Name	2014 Silicon Nanoelectronics Workshop, SNW 2014

Conference

Conference	Silicon Nanoelectronics Workshop, SNW 2014
Country	United States
City	Honolulu
Period	8/06/14 → 9/06/14

Access to Document

10.1109/SNW.2014.7348617

Link to publication in Scopus

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Hung, C. M., Li, K. C., Hsieh, E. R., Wang, C. T., Kou, C. I., Chang, E. Y., & Chung, S. S. (2015). A comprehensive transport model for high performance HEMTs considering the parasitic resistance and capacitance effects. In 2014 Silicon Nanoelectronics Workshop, SNW 2014 [7348617] (2014 Silicon Nanoelectronics Workshop, SNW 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SNW.2014.7348617

Hung, C. M. ; Li, K. C. ; Hsieh, E. R. ; Wang, C. T. ; Kou, C. I. ; Chang, Edward Yi ; Chung, Steve S. / A comprehensive transport model for high performance HEMTs considering the parasitic resistance and capacitance effects. 2014 Silicon Nanoelectronics Workshop, SNW 2014. Institute of Electrical and Electronics Engineers Inc., 2015. (2014 Silicon Nanoelectronics Workshop, SNW 2014).

@inproceedings{4b6083de43ea4372893dd2cc354cb1ed,

title = "A comprehensive transport model for high performance HEMTs considering the parasitic resistance and capacitance effects",

abstract = " HEMT suffers from parasitic resistance (R sd ) and capacitance(C gd ) effects with the shrinking of channel length, leading to degraded performance in logic and RF applications. A new while simple method to extract parasitic RC has been proposed to construct accurate transport parameters in HEMTs. In comparison to the constant-R sd method, this new voltage dependent method provides more convincing results, especially for very short channel devices. On the other hand, an accurate C gd correction method has also been incorporated to adequately represent the mobility. Finally, a guideline to design high performance HEMTs has been proposed. ",

author = "Hung, {C. M.} and Li, {K. C.} and Hsieh, {E. R.} and Wang, {C. T.} and Kou, {C. I.} and Chang, {Edward Yi} and Chung, {Steve S.}",

year = "2015",

month = dec,

day = "4",

doi = "10.1109/SNW.2014.7348617",

language = "English",

series = "2014 Silicon Nanoelectronics Workshop, SNW 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2014 Silicon Nanoelectronics Workshop, SNW 2014",

address = "United States",

note = "null ; Conference date: 08-06-2014 Through 09-06-2014",

}

Hung, CM, Li, KC, Hsieh, ER, Wang, CT, Kou, CI, Chang, EY & Chung, SS 2015, A comprehensive transport model for high performance HEMTs considering the parasitic resistance and capacitance effects. in 2014 Silicon Nanoelectronics Workshop, SNW 2014., 7348617, 2014 Silicon Nanoelectronics Workshop, SNW 2014, Institute of Electrical and Electronics Engineers Inc., Silicon Nanoelectronics Workshop, SNW 2014, Honolulu, United States, 8/06/14. https://doi.org/10.1109/SNW.2014.7348617

A comprehensive transport model for high performance HEMTs considering the parasitic resistance and capacitance effects. / Hung, C. M.; Li, K. C.; Hsieh, E. R.; Wang, C. T.; Kou, C. I.; Chang, Edward Yi; Chung, Steve S.

2014 Silicon Nanoelectronics Workshop, SNW 2014. Institute of Electrical and Electronics Engineers Inc., 2015. 7348617 (2014 Silicon Nanoelectronics Workshop, SNW 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A comprehensive transport model for high performance HEMTs considering the parasitic resistance and capacitance effects

AU - Hung, C. M.

AU - Li, K. C.

AU - Hsieh, E. R.

AU - Wang, C. T.

AU - Kou, C. I.

AU - Chang, Edward Yi

AU - Chung, Steve S.

PY - 2015/12/4

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N2 - HEMT suffers from parasitic resistance (R sd ) and capacitance(C gd ) effects with the shrinking of channel length, leading to degraded performance in logic and RF applications. A new while simple method to extract parasitic RC has been proposed to construct accurate transport parameters in HEMTs. In comparison to the constant-R sd method, this new voltage dependent method provides more convincing results, especially for very short channel devices. On the other hand, an accurate C gd correction method has also been incorporated to adequately represent the mobility. Finally, a guideline to design high performance HEMTs has been proposed.

AB - HEMT suffers from parasitic resistance (R sd ) and capacitance(C gd ) effects with the shrinking of channel length, leading to degraded performance in logic and RF applications. A new while simple method to extract parasitic RC has been proposed to construct accurate transport parameters in HEMTs. In comparison to the constant-R sd method, this new voltage dependent method provides more convincing results, especially for very short channel devices. On the other hand, an accurate C gd correction method has also been incorporated to adequately represent the mobility. Finally, a guideline to design high performance HEMTs has been proposed.

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T3 - 2014 Silicon Nanoelectronics Workshop, SNW 2014

BT - 2014 Silicon Nanoelectronics Workshop, SNW 2014

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 8 June 2014 through 9 June 2014

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Hung CM, Li KC, Hsieh ER, Wang CT, Kou CI, Chang EY et al. A comprehensive transport model for high performance HEMTs considering the parasitic resistance and capacitance effects. In 2014 Silicon Nanoelectronics Workshop, SNW 2014. Institute of Electrical and Electronics Engineers Inc. 2015. 7348617. (2014 Silicon Nanoelectronics Workshop, SNW 2014). https://doi.org/10.1109/SNW.2014.7348617