A comprehensive transport model for high performance HEMTs considering the parasitic resistance and capacitance effects

C. M. Hung, K. C. Li, E. R. Hsieh, C. T. Wang, C. I. Kou, Edward Yi Chang, Steve S. Chung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

HEMT suffers from parasitic resistance (R sd ) and capacitance(C gd ) effects with the shrinking of channel length, leading to degraded performance in logic and RF applications. A new while simple method to extract parasitic RC has been proposed to construct accurate transport parameters in HEMTs. In comparison to the constant-R sd method, this new voltage dependent method provides more convincing results, especially for very short channel devices. On the other hand, an accurate C gd correction method has also been incorporated to adequately represent the mobility. Finally, a guideline to design high performance HEMTs has been proposed.

Original languageEnglish
Title of host publication2014 Silicon Nanoelectronics Workshop, SNW 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479956777
DOIs
StatePublished - 4 Dec 2015
EventSilicon Nanoelectronics Workshop, SNW 2014 - Honolulu, United States
Duration: 8 Jun 20149 Jun 2014

Publication series

Name2014 Silicon Nanoelectronics Workshop, SNW 2014

Conference

ConferenceSilicon Nanoelectronics Workshop, SNW 2014
CountryUnited States
CityHonolulu
Period8/06/149/06/14

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    Hung, C. M., Li, K. C., Hsieh, E. R., Wang, C. T., Kou, C. I., Chang, E. Y., & Chung, S. S. (2015). A comprehensive transport model for high performance HEMTs considering the parasitic resistance and capacitance effects. In 2014 Silicon Nanoelectronics Workshop, SNW 2014 [7348617] (2014 Silicon Nanoelectronics Workshop, SNW 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SNW.2014.7348617