A comprehensive study on the oxidation of 4H-SiC in diluted N2O ambient

Yuan Hung Tseng, Tsung Han Wu, Bing-Yue Tsui, Cheng Tyng Yen, Chien Chung Hung, Chwan Ying Lee

Research output: Contribution to journalArticle

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Abstract

The oxidation mechanism of 4H-SiC in diluted N2O ambient was studied at various temperatures, N2O flow rates, and N2/N2O flow ratios. The collision partner, N2 in this study, plays crucial roles in determining the oxidation rate and N-incorporation. According to the proposed oxidation mechanism, lowering the interface state density at lower oxidation temperatures is possible with a high-efficiency collision partner.

Original languageEnglish
Article number04CR02
JournalJapanese Journal of Applied Physics
Volume56
Issue number4
DOIs
StatePublished - 1 Apr 2017

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