A comprehensive study of polymorphic phase distribution of ferroelectric-dielectrics and interfacial layer effects on negative capacitance FETs for Sub-5 nm node

Y. T. Tang, C. J. Su, Y. H. Wang, K. H. Kao, T. L. Wu, P. J. Sung, F. J. Hou, C. J. Wang, M. S. Yeh, Y. J. Lee, W. F. Wu, G. W. Huang, J. M. Shieh, W. K. Yeh, Y. H. Wang

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

3 Scopus citations

Abstract

The impact of a realistic representation of gate-oxide granularity on negative-capacitance (NC) FETs at sub-5nm node is studied by a newly developed thermodynamic energy model based on the first principle calculation (FPC). For the first time, the calculation fully couples the Landau-Khalatnikov (L-K) equation with grain-size effect equation in NC-FETs. It explains the experimental results in phase transition and reveals excellent immunity against depolarization in ferroelectric (FE) layer owing to dopant concentration and stress in thin films. A sub-5nm node (LG=10nm) NC-FET with thin FE layer (TFE∼2nm) is integrated to achieve low subthreshold slope (SS) of 52mV/dec via a 1.9GPa-tensor stressed interfacial layer (IL) and 12% Zr-doped HfO2.
Original languageAmerican English
Title of host publicationDigest of Technical Papers - Symposium on VLSI Technology
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages45-46
Number of pages2
ISBN (Print)9781538642160
DOIs
StatePublished - 29 Oct 2018

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
Volume2018-June

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