A comprehensive study of hot carrier stress-induced drain leakage current degradation in thin-oxide n-MOSFET's

Ta-Hui Wang*, Lu Ping Chiang, Nian Kai Zous, Charng Feng Hsu, Li Yuan Huang, Tien-Sheng Chao

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

38 Scopus citations

Abstract

The mechanisms and characteristics of hot carrier stress-induced drain leakage current degradation in thin-oxide n-MOSFET's are investigated. Both interface trap and oxide charge effects are analyzed. Various drain leakage current components at zero V gs such as drain-to-source subthreshold leakage, band-to-band tunneling current, and interface trap-induced leakage are taken into account. The trap-assisted drain leakage mechanisms include charge sequential tunneling current, thermionic-field emission current, and Shockley-Read-Hall generation current. The dependence of drain leakage current on supply voltage, temperature, and oxide thickness is characterized. Our result shows that the trap-assisted leakage may become a dominant drain leakage mechanism as supply voltage is reduced. In addition, a strong oxide thickness dependence of drain leakage degradation is observed. In ultra-thin gate oxide (30 Å) n-MOSFET's, drain leakage current degradation is attributed mostly to interface trap creation, while in thicker oxide (53 Å) devices, the drain leakage current exhibits two-stage degradation, a power law degradation rate in the initial stage due to interface trap generation, followed by an accelerated degradation rate in the second stage caused by oxide charge creation.

Original languageEnglish
Pages (from-to)1877-1882
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume46
Issue number9
DOIs
StatePublished - 1 Dec 1999

Keywords

  • Drain leakage degradation
  • Hot carrier
  • Thin oxide

Fingerprint Dive into the research topics of 'A comprehensive study of hot carrier stress-induced drain leakage current degradation in thin-oxide n-MOSFET's'. Together they form a unique fingerprint.

Cite this