A comprehensive study of Ge1-xSix on Ge for the Ge nMOSFETs with tensile stress, shallow junctions and reduced leakage

Guang Li Luo*, Shih Chiang Huang, Cheng Ting Chung, Dawei Heh, Chao-Hsin Chien, Chao Ching Cheng, Yao Jen Lee, Wen Fa Wu, Chiung Chih Hsu, Mei Ling Kuo, Jay Yi Yao, Mao Nan Chang, Chee Wee Liu, Chen-Ming Hu, Chun Yen Chang, Fu Liang Yang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

For the first time, growth of high-quality Ge-rich Ge1-xSi x (0≤x≤0.14) layers on Ge substrate was demonstrated. An effective suppression of the phosphorus diffusion in Ge1-xSi x and a better thermal stability of the nickel germanide on Ge 1-xSix were observed. A higher rectifying ratio with a reduced diode leakage current in n+-Ge1-xSi x/p-Ge1-xSix is compared with n+-Ge/p-Ge. These results indicate that it is suitable for Ge1-xSix to be used as source/drain (S/D) to fabricate the uniaxial tensile-strained channel Ge nMOSFETs.

Original languageEnglish
Title of host publication2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
DOIs
StatePublished - 1 Dec 2009
Event2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States
Duration: 7 Dec 20099 Dec 2009

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2009 International Electron Devices Meeting, IEDM 2009
CountryUnited States
CityBaltimore, MD
Period7/12/099/12/09

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