For the first time, growth of high-quality Ge-rich Ge1-xSi x (0≤x≤0.14) layers on Ge substrate was demonstrated. An effective suppression of the phosphorus diffusion in Ge1-xSi x and a better thermal stability of the nickel germanide on Ge 1-xSix were observed. A higher rectifying ratio with a reduced diode leakage current in n+-Ge1-xSi x/p-Ge1-xSix is compared with n+-Ge/p-Ge. These results indicate that it is suitable for Ge1-xSix to be used as source/drain (S/D) to fabricate the uniaxial tensile-strained channel Ge nMOSFETs.
|Title of host publication||2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest|
|State||Published - 1 Dec 2009|
|Event||2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States|
Duration: 7 Dec 2009 → 9 Dec 2009
|Name||Technical Digest - International Electron Devices Meeting, IEDM|
|Conference||2009 International Electron Devices Meeting, IEDM 2009|
|Period||7/12/09 → 9/12/09|