A comprehensive study of 3-stage high resistance state retention behavior for TMO ReRAMs from single cells to a large array

Yu Hsuan Lin, Yung Han Ho, Ming Hsiu Lee, Chao Hung Wang, Yu Yu Lin, Feng Ming Lee, Kai Chieh Hsu, Po Hao Tseng, Dai Ying Lee, Kuang Hao Chiang, Keh Chung Wang, Tseung-Yuen Tseng, Chih Yuan Lu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

For the first time the retention of high resistance state (HRS) in resistive random access memory (ReRAM) is found to compose of three stages - extending tail-bits, distribution shift, and then distribution broadening. This work provides a comprehensive study on the HRS's retention behavior in WOx-based ReRAMs from single device characteristics to group distribution. Different from conventional activation energy (Ea) analysis, the mean and variance of the array distribution are presented to overcome the non-uniform Ea issue. Since the extracted Ea fits well with Vo 2+ (oxygen vacancy) migration characteristics, the three retention stages are suggested to be the competing results from the migration, recombination, and generation of the Vo 2+ and O 2- in the gap region. A three-dimensional retention model with kinetic Monte Carlo simulator and trap-assisted tunneling conduction is proposed to discuss the dominating mechanism in different time and temperature scales. The mechanism for random telegraph noise is also included to illustrate the fluctuating nature of the HRS cells.

Original languageEnglish
Title of host publication2017 IEEE International Electron Devices Meeting, IEDM 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2.5.1-2.5.4
ISBN (Electronic)9781538635599
DOIs
StatePublished - 23 Jan 2018
Event63rd IEEE International Electron Devices Meeting, IEDM 2017 - San Francisco, United States
Duration: 2 Dec 20176 Dec 2017

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference63rd IEEE International Electron Devices Meeting, IEDM 2017
CountryUnited States
CitySan Francisco
Period2/12/176/12/17

Fingerprint Dive into the research topics of 'A comprehensive study of 3-stage high resistance state retention behavior for TMO ReRAMs from single cells to a large array'. Together they form a unique fingerprint.

Cite this