A Comprehensive Kinetical Modeling of Polymorphic Phase Distribution of Ferroelectric-Dielectrics and Interfacial Energy Effects on Negative Capacitance FETs

Y. T. Tang*, C. L. Fang, Y. C. Kao, N. Modolo, C. J. Su, T. L. Wu, K. H. Kao, P. J. Wu, S. W. Hsaio, Artur Useinov, Pin Su, W. F. Wu, G. W. Huang, J. M. Shieh, W. K. Yeh, Y. H. Wang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

This paper clarifies for the first time the origin of ferroelectricity in the Negative Capacitance Field-Effect Transistors (NCFETs) by molecular dynamics (MD) simulation. MD simulation considering atomic interactions between all atoms enables accurate predictions for the microstructure even at all interfaces. By incorporating the results from MD simulations into a kinetic model, it is able to predict the conditions of crystallization and phase transition during RTP and cooling processes that govern ferroelectricity in FETs. Our simulation reveals that the comparable interfacial energy between o-and t-phase, and in-plane tensile stress from metal capping or interfacial layers (ILs) enable more phase transition from t-to o-phase, and more ferroelectricity in NCFETs. Finally, design methodology to maintain the electric variation of NCFETs is also proposed.

Original languageEnglish
Title of host publication2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers
PublisherInstitute of Electrical and Electronics Engineers Inc.
PagesT222-T223
Number of pages2
ISBN (Electronic)9784863487178
DOIs
StatePublished - Jun 2019
Event39th Symposium on VLSI Technology, VLSI Technology 2019 - Kyoto, Japan
Duration: 9 Jun 201914 Jun 2019

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
Volume2019-June
ISSN (Print)0743-1562

Conference

Conference39th Symposium on VLSI Technology, VLSI Technology 2019
CountryJapan
CityKyoto
Period9/06/1914/06/19

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