A comprehensive evaluation of the performance of fin-type epitaxial tunnel layer (ETL) tunnel FET

Po Shao Lin, Bing-Yue Tsui

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Epitaxial tunnel layer tunnel FET (ETL TFET) is one of the promising device for ultra-low power applications. In this work, device performance between planar ETL TFET and Fin ETL TFET are evaluated. For n-type TFET, the electric field enhancement in Si region due to the fin structure results in Si-to-Ge and Si-to-Si tunneling at low voltage so that the subthreshold swing is degraded. For the p-type TFET, different TFET structures show similar subthreshold swing because only Ge-to-Ge tunneling occurs. In comparison with the planar TFET, Fin TFET exhibits 35% improvement and 40% degradation on conduction current for n-type and p-type TFET, respectively.

Original languageEnglish
Title of host publicationEDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-2
Number of pages2
ISBN (Electronic)9781538629079
DOIs
StatePublished - 1 Dec 2017
Event13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017 - Hsinchu, Taiwan
Duration: 18 Oct 201720 Oct 2017

Publication series

NameEDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits
Volume2017-January

Conference

Conference13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017
CountryTaiwan
CityHsinchu
Period18/10/1720/10/17

Keywords

  • Band-to-band tunneling (BTBT)
  • Fin FET
  • Subthreshold swing
  • Tunnel FET

Fingerprint Dive into the research topics of 'A comprehensive evaluation of the performance of fin-type epitaxial tunnel layer (ETL) tunnel FET'. Together they form a unique fingerprint.

Cite this