A comprehensive comparative analysis of FinFET and Trigate device, SRAM and logic circuits

Chia Hao Pao*, Ming Long Fan, Ming Fu Tsai, Yin Nien Chen, Vita Pi Ho Hu, Pin Su, Ching Te Chuang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

We present a comprehensive comparative analysis of FinFET and Trigate device characteristics, 6T SRAM stability and logic circuits. The impact of intrinsic random device variations, including fin Line Edge Roughness (LER), Work Function Variation (WFV) and fin width scaling on FinFET and Trigate device Subthreshold Slope (S.S.), VT, 6T SRAM Read Static Noise Margin (RSNM) and Write Static Noise Margin (WSNM) are investigated and compared by using 3D atomistic TCAD simulation. The results indicate that Trigate device shows slightly better variability control under the same electrical width and fin width (10nm and 7nm) considering fin LER and WFV. Next, we investigate the impact of single charged trap induced Random Telegraph Noise (RTN) on FinFET and Trigate device characteristics, 6T SRAM and logic circuits. The top-gate and the lower fin height of Trigate device under the same electrical width and fin width cause the current density to concentrate close to the bottom of the fin, resulting in stronger dependence on the location of the trap, larger RTN ΔID/ID amplitude and larger ΔVT with a trap placed at the worst position under fin LER and WFV. The impact of RTN trapping/detrapping on 6T SRAM RSNM, the leakage-delay of inverter, Two-Way NAND and 2-To-1 Multiplexer (MUX) are examined. With degreasing supply voltage, the RTN degradation of Trigate SRAM RSNM and logic circuits become larger compared with the FinFET counterparts.

Original languageEnglish
Title of host publication2012 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2012
Pages463-466
Number of pages4
DOIs
StatePublished - 1 Dec 2012
Event2012 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2012 - Kaohsiung, Taiwan
Duration: 2 Dec 20125 Dec 2012

Publication series

NameIEEE Asia-Pacific Conference on Circuits and Systems, Proceedings, APCCAS

Conference

Conference2012 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2012
CountryTaiwan
CityKaohsiung
Period2/12/125/12/12

Keywords

  • FinFET
  • Random Telegraph Noise
  • SRAM
  • Trigate
  • Variability

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