A comparison study on the Al-based interfacial layers for Ge MIS devices

Yi Gin Yang, Bing-Yue Tsui

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The performance of MIS devices on Ge substrate using AlN and Al2O3 as interfacial layer is investigated. Using AlN as interfacial layer can achieve lower leakage current and smaller hysteresis than using Al2O3 because AlN is a more effective barrier to against GeO volatilization and Ge diffusion. However, the interface state density of the AlN/Ge structure is poor. It is found that capping AlN on Al2O3 improves the hysteresis and leakage current while relax the interface state density degradation. It is suggested that appropriate AlN/Al2O3 stack can be used to fabricate high-quality MIS capacitor with ultra-thin effective oxide thickness.

Original languageEnglish
Title of host publicationProceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages336-339
Number of pages4
ISBN (Electronic)9781479999286, 9781479999286
DOIs
StatePublished - 25 Aug 2015
Event22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015 - Hsinchu, Taiwan
Duration: 29 Jun 20152 Jul 2015

Publication series

NameProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Volume2015-August

Conference

Conference22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
CountryTaiwan
CityHsinchu
Period29/06/152/07/15

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    Yang, Y. G., & Tsui, B-Y. (2015). A comparison study on the Al-based interfacial layers for Ge MIS devices. In Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015 (pp. 336-339). [7224400] (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2015-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPFA.2015.7224400