A comparison study of high-density MIM capacitors with ALD HfO 2-Al 2O 3 laminated, sandwiched and stacked dielectrics

Shi Jin Ding*, H. Hu, Chunxiang Zhu, S. J. Kim, M. F. Li, B. J. Cho, Albert Chin, D. L. Kwong

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

2 Scopus citations

Abstract

The HfO 2-Al 2O 3 laminate MIM capacitor exhibits superior performances to the stack and sandwich counterparts, including the smallest linear voltage coefficient of capacitance (β) and leakage current, the highest breakdown voltage, the longest time-to-breakdown as well as the most stable quadratic voltage coefficient of capacitance (a) and capacitance under CVS due to weak electron trapping. The underlying mechanism is likely attributed to the alternate insertions of Al 2O 3 into the bulk HfO 2, thereby preventing crystallization of HfO 2 film.

Original languageEnglish
Pages403-406
Number of pages4
StatePublished - 1 Dec 2004
Event2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China
Duration: 18 Oct 200421 Oct 2004

Conference

Conference2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
CountryChina
CityBeijing
Period18/10/0421/10/04

Fingerprint Dive into the research topics of 'A comparison study of high-density MIM capacitors with ALD HfO <sub>2</sub>-Al <sub>2</sub>O <sub>3</sub> laminated, sandwiched and stacked dielectrics'. Together they form a unique fingerprint.

Cite this