The HfO 2-Al 2O 3 laminate MIM capacitor exhibits superior performances to the stack and sandwich counterparts, including the smallest linear voltage coefficient of capacitance (β) and leakage current, the highest breakdown voltage, the longest time-to-breakdown as well as the most stable quadratic voltage coefficient of capacitance (a) and capacitance under CVS due to weak electron trapping. The underlying mechanism is likely attributed to the alternate insertions of Al 2O 3 into the bulk HfO 2, thereby preventing crystallization of HfO 2 film.
|Number of pages||4|
|State||Published - 1 Dec 2004|
|Event||2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China|
Duration: 18 Oct 2004 → 21 Oct 2004
|Conference||2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004|
|Period||18/10/04 → 21/10/04|