A comparison of quantum correction models for nanoscale MOS structures under inversion conditions

Yi-Ming Li*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

Quantum correction model features the correction of the inversion layer charge on different classical transport models in semiconductor device simulation. This approach has successfully been of great interest in the recent years. Considering a metal-oxide-semiconductor (MOS) structure in this paper, the Hänsen, the modified local density approximation (MLDA), the density-gradient (DG), the effective potential (EP), and our models are investigated computationally and compared systematically with the result of the Schrödinger-Poisson (SP) model. In terms of the accuracy for (1) the position of the charge concentration peak, (2) the maximum of the charge concentration, (3) the total inversion charge sheet density, and (4) the average inversion charge depth, these well-established models are examined simultaneously. The DG model requires the solution of a boundary value problem, the EP model overestimates the position of the charge concentration peak and the maximum of the charge concentration, our explicit model demonstrates good accuracy among models.

Original languageAmerican English
Title of host publicationCross-Disciplinary Applied Research in Materials Science and Technology - Proceedings of the 1st International Meeting on Applied Physics, (APHYS-2003)
PublisherTrans Tech Publications Ltd
Pages603-610
Number of pages8
ISBN (Print)0878499628, 9780878499625
DOIs
StatePublished - Mar 2005
Event1st International Meeting on Applied Physics, APHYS-2003 - Badajoz, Spain
Duration: 13 Oct 200318 Oct 2003

Publication series

NameMaterials Science Forum
Volume480-481
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

Conference1st International Meeting on Applied Physics, APHYS-2003
CountrySpain
CityBadajoz
Period13/10/0318/10/03

Keywords

  • Computer simulation
  • Electron density
  • MOS structure
  • Nanodevice
  • Numerical method
  • Quantum correction model
  • Quantum mechanical effects

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