A comparative study of the effect of dynamic stressing on high-field endurance and stability of reoxidized-nitrided, fluorinated and conventional oxides

Z. H. Liu, E. Rosenbaum, P. K. Ko, Chen-Ming Hu, Y. C. Cheng, C. G. Sodini, B. J. Gross, T. P. Ma

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

High field endurances of reoxidized-nitrided oxide (RNO), and fluorinated oxide (FOX) under dynamic Fowler-Nordheim stress were compared with that of conventional oxide. Time-dependent dielectric breakdown (TDDB) of RNO and FOX is shown to be strongly dependent on frequency, and lifetime under high frequency stress is longer than that under DC stress. RNO and FOX display interface hardness under high field injection at all frequencies. Interface trap generation is not a strong function of frequency in any of the oxides studied. Examination of charge trapping indicates that frequency-dependent hole trapping is responsible for the frequency dependence of TDDB.

Original languageEnglish
Title of host publicationInternational Electron Devices Meeting 1991, IEDM 1991
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages723-726
Number of pages4
ISBN (Electronic)0780302435
DOIs
StatePublished - 1 Jan 1991
EventInternational Electron Devices Meeting, IEDM 1991 - Washington, United States
Duration: 8 Dec 199111 Dec 1991

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume1991-January
ISSN (Print)0163-1918

Conference

ConferenceInternational Electron Devices Meeting, IEDM 1991
CountryUnited States
CityWashington
Period8/12/9111/12/91

Keywords

  • Annealing
  • Breakdown voltage
  • Capacitance-voltage characteristics
  • Current measurement
  • Electric breakdown
  • Frequency dependence
  • Impact ionization
  • Monitoring
  • Stability
  • Stress

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    Liu, Z. H., Rosenbaum, E., Ko, P. K., Hu, C-M., Cheng, Y. C., Sodini, C. G., Gross, B. J., & Ma, T. P. (1991). A comparative study of the effect of dynamic stressing on high-field endurance and stability of reoxidized-nitrided, fluorinated and conventional oxides. In International Electron Devices Meeting 1991, IEDM 1991 (pp. 723-726). [235321] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 1991-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.1991.235321