A comparative study of SILC transient characteristics and mechanisms in FN stressed and hot hole stressed tunnel oxides

Nian Kai Zous*, Ta-Hui Wang, Chih Chich Yeh, Ching Wei Tsai, Chimoon Huang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

The mechanisms and transient characteristics of hot hole stress and FN stress induced excess leakage currents in tunnel oxides are investigated. Hot hole SILC is found to have a more pronounced transient effect. The transient is attributed to positive oxide charge detrapping and thus annihilation of positive charge-assisted tunneling current. The positive charge assisted tunneling current can be annealed by substrate hot electron injection. The DC and transient components in FN SILC are also discussed.

Original languageEnglish
Title of host publicationAnnual Proceedings - Reliability Physics (Symposium)
PublisherIEEE
Pages405-409
Number of pages5
ISBN (Print)0780352203
DOIs
StatePublished - 1 Jan 1999
EventProceedings of the 1999 37th Annual IEEE International Reliability Physics Symposium - San Diego, CA, USA
Duration: 23 Mar 199925 Mar 1999

Publication series

NameAnnual Proceedings - Reliability Physics (Symposium)
ISSN (Print)0099-9512

Conference

ConferenceProceedings of the 1999 37th Annual IEEE International Reliability Physics Symposium
CitySan Diego, CA, USA
Period23/03/9925/03/99

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  • Cite this

    Zous, N. K., Wang, T-H., Yeh, C. C., Tsai, C. W., & Huang, C. (1999). A comparative study of SILC transient characteristics and mechanisms in FN stressed and hot hole stressed tunnel oxides. In Annual Proceedings - Reliability Physics (Symposium) (pp. 405-409). (Annual Proceedings - Reliability Physics (Symposium)). IEEE. https://doi.org/10.1109/RELPHY.1999.761647