A comparative study of NBTI and RTN amplitude distributions in high-κ gate dielectric pMOSFETs

J. P. Chiu*, Y. T. Chung, Ta-Hui Wang, Min Cheng Chen, C. Y. Lu, K. F. Yu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Random telegraph noise (RTN) and negative bias temperature (NBT) stress-induced threshold voltage (V t) fluctuations in high-κ gate dielectric and metal-gate pMOSFETs are investigated. We measured RTN amplitude distributions before and after NBT stress. RTN in poststressed devices exhibits a broader amplitude distribution than the prestress one. In addition, we trace a single trapped charge-induced Δ V t in NBT stress and find that the average Δ V t is significantly larger than a Δ V t caused by RTN. A 3-D atomistic simulation is performed to compare a single-charge-induced Δ V t by RTN and NBTI. In our simulation, the probability distribution of a NBT trapped charge in the channel is calculated from the reaction-diffusion model. Our simulation confirms that the NBT-induced Δ V t indeed has a larger distribution tail than RTN due to a current-path percolation effect.

Original languageEnglish
Article number6112787
Pages (from-to)176-178
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number2
DOIs
StatePublished - 1 Feb 2012

Keywords

  • Amplitude
  • negative bias temperature instability (NBTI)
  • random telegraph noise (RTN)
  • simulation

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