## Abstract

Random telegraph noise (RTN) and negative bias temperature (NBT) stress-induced threshold voltage (V _{t}) fluctuations in high-κ gate dielectric and metal-gate pMOSFETs are investigated. We measured RTN amplitude distributions before and after NBT stress. RTN in poststressed devices exhibits a broader amplitude distribution than the prestress one. In addition, we trace a single trapped charge-induced Δ V _{t} in NBT stress and find that the average Δ V _{t} is significantly larger than a Δ V _{t} caused by RTN. A 3-D atomistic simulation is performed to compare a single-charge-induced Δ V _{t} by RTN and NBTI. In our simulation, the probability distribution of a NBT trapped charge in the channel is calculated from the reaction-diffusion model. Our simulation confirms that the NBT-induced Δ V _{t} indeed has a larger distribution tail than RTN due to a current-path percolation effect.

Original language | English |
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Article number | 6112787 |

Pages (from-to) | 176-178 |

Number of pages | 3 |

Journal | IEEE Electron Device Letters |

Volume | 33 |

Issue number | 2 |

DOIs | |

State | Published - 1 Feb 2012 |

## Keywords

- Amplitude
- negative bias temperature instability (NBTI)
- random telegraph noise (RTN)
- simulation