A comparative study of carrier transport for overlapped and nonoverlapped multiple-gate SOI MOSFETs

Wei Lee*, Pin Su

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

This paper provides a comparative study of carrier transport characteristics for multiple-gate silicon-on-insulator MOSFETs with and without the nonoverlapped source/drain structure. For the overlapped devices, we observed Boltzmann law in subthreshold characteristics and phonon-limited behavior in the inversion regime. For the nonoverlapped devices, however, we found insensitive temperature dependence for drain current in both subthreshold and inversion regimes. Our low-temperature measurements indicate that the intersubband scattering is the dominant carrier transport mechanism for narrow overlapped multigate field-effect transistors (MuGFETs). For the nonoverlapped MuGFETs, the voltage-controlled potential barriers in the nonoverlapped regions may give rise to the weak localization effect (conductance reduction) and the quantum interference fluctuations.

Original languageEnglish
Article number4781803
Pages (from-to)444-448
Number of pages5
JournalIEEE Transactions on Nanotechnology
Volume8
Issue number4
DOIs
StatePublished - 1 Jul 2009

Keywords

  • Carrier transport
  • MOSFET
  • Multiple-gate
  • Nonoverlapped
  • Overlapped

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