A comparative analysis of tunneling FET circuit switching characteristics and SRAM stability and performance

Yin Nien Chen*, Ming Long Fan, Pi Ho Hu, Ming Fu Tsai, Chia Hao Pao, Pin Su, Ching Te Chuang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

With steep sub-threshold slope, tunneling FETs (TFETs) are promising candidates for ultra-low voltage operation, achieving low leakage current and superior performance compared with the conventional MOSFETs. However, the broad soft transition region in the Id-Vgs characteristics, where Id increases slowly to reach saturation following the steep slope region, results in large crossover region/current in an inverter, thus degrading the Hold/Read Static Noise Margin (H/RSNM) of TFET SRAMs. The Write-ability and Write Static Noise Margin (WSNM) of TFET SRAMs are constrained by the uni-directional conduction characteristics caused by the asymmetric source-drain structure and large cross-over contention of the Write access transistor and the holding transistor. In this paper, we present a detailed analysis of TFET circuit switching characteristics/ performance and compare the stability/performance of several TFET SRAM cells using atomistic TCAD mixed-mode simulations. A robust 7T Driver-Less (DL) TFET SRAM cell is proposed. The proposed 7T DL TFET SRAM cell, with decoupled Read current path from cell storage node and push-pull Write action with asymmetrical raised-cell-virtual-ground Write-assist, provides significant improvement in Read/Write stability and performance.

Original languageEnglish
Title of host publication2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012
Pages157-160
Number of pages4
DOIs
StatePublished - 11 Dec 2012
Event42nd European Solid-State Device Research Conference, ESSDERC 2012 - Bordeaux, France
Duration: 17 Sep 201221 Sep 2012

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Conference

Conference42nd European Solid-State Device Research Conference, ESSDERC 2012
CountryFrance
CityBordeaux
Period17/09/1221/09/12

Fingerprint Dive into the research topics of 'A comparative analysis of tunneling FET circuit switching characteristics and SRAM stability and performance'. Together they form a unique fingerprint.

  • Cite this

    Chen, Y. N., Fan, M. L., Hu, P. H., Tsai, M. F., Pao, C. H., Su, P., & Chuang, C. T. (2012). A comparative analysis of tunneling FET circuit switching characteristics and SRAM stability and performance. In 2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012 (pp. 157-160). [6343357] (European Solid-State Device Research Conference). https://doi.org/10.1109/ESSDERC.2012.6343357