A Compact Subthreshold Model for Short-Channel Monolayer Transition Metal Dichalcogenide Field-Effect Transistors

Wei Xiang You, Pin Su*

*Corresponding author for this work

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

This brief presents a compact subthreshold model for short-channel monolayer transition metal dichalcogenide (TMD) field-effect transistors. In this model, the impact of fringe fields from the high-K gate dielectric is considered and incorporated into a new characteristic-length expression using a single model parameter. This model has been verified with 2-D numerical simulations for TMD devices with gate length down to 5.9 nm based on ITRS 2028 low-power technology node.

Original languageEnglish
Article number7482768
Pages (from-to)2971-2974
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume63
Issue number7
DOIs
StatePublished - 1 Jul 2016

Keywords

  • 2-D semiconductors
  • high-K gate dielectrics
  • molybdenum disulphide (MoS2)
  • short-channel effects
  • subthreshold current model
  • transition metal dichalcogenide (TMD)

Fingerprint Dive into the research topics of 'A Compact Subthreshold Model for Short-Channel Monolayer Transition Metal Dichalcogenide Field-Effect Transistors'. Together they form a unique fingerprint.

Cite this