A compact RF CMOS modeling for accurate high-frequency noise simulation in sub-100-nm MOSFETs

Jyh-Chyurn Guo*, Yi M. Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

A compact RF CMOS model incorporating an improved thermal noise model is developed. Short-channel effects (SCEs), substrate potential fluctuation effect, and parasitic-resistance-induced excess noises were implemented in analytical formulas to accurately simulate RF noises in sub-100-nm MOSFETs. The intrinsic noise extracted through a previously developed lossy substrate de-embedding method and calculated by the improved noise model can consistently predict gate length scaling effects. For 65- and 80-nm n-channel MOS with fT above 160 and 100 GHz, NFmin at 10 GHz can be suppressed to 0.5 and 0.7 dB, respectively. Drain current noise Sid reveals an apparently larger value for 65-nm devices than that for 80-nm devices due to SCE. On the other hand, the shorter channel helps reduce the gate current noise S ig attributed to smaller gate capacitances. Gate resistance R g-induced excess noise dominates in Sig near one order higher than the intrinsic gate noise that is free from Rg for 65-nm devices. The compact RF CMOS modeling can facilitate high-frequency noise simulation accuracy in nanoscale RF CMOS circuits for low-noise design.

Original languageEnglish
Article number4603078
Pages (from-to)1684-1688
Number of pages5
JournalIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Volume27
Issue number9
DOIs
StatePublished - 1 Sep 2008

Keywords

  • Lossy substrate de-embedding
  • Radio frequency (RF) complementary metal-oxide-semiconductor (CMOS) model
  • Short-channel effect (SCE)
  • Thermal noise model

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