A compact quantum-mechanical model for double-gate MOSFET

Chung Hsun Lin*, Mohan V. Dunga, Ali M. Niknejad, Chen-Ming Hu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

A bias-dependent QM correction for surface potential calculation is derived for DG MOSFETs. The QM-corrected surface potential agrees with the 2-D simulation results well. This indicates that both Vth shift in the subthreshold and strong inversion regions and gate capacitance degradation in the strong inversion region due to QM are predicted simultaneously. The model can predict the complicated QM effect dependence on various device parameters, such as Nbody, Tsi, Tox, etc.

Original languageEnglish
Title of host publicationICSICT-2006
Subtitle of host publication2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
PublisherIEEE Computer Society
Pages1272-1274
Number of pages3
ISBN (Print)1424401615, 9781424401611
DOIs
StatePublished - 23 Oct 2006
EventICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
Duration: 23 Oct 200626 Oct 2006

Publication series

NameICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Conference

ConferenceICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
CountryChina
CityShanghai
Period23/10/0626/10/06

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