A compact model to predict quantized sub-band energy levels and inversion layer centroids of MOSFETs with a parabolic potential well approximation

J. He*, M. S. Chan, Chen-Ming Hu, X. Zhang, Y. Y. Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

A compact model to predict sub-band energy levels and inversion charge centroids in the MOSFET surface inversion layer has been presented in this paper for parabolic potential well approximation. Based on a coupled solution of the Schrödinger equation and the Poisson equation following the WKB method, one transcendental equation of the sub-band energy level has been rigorously derived and then the approximate analytical solutions for the sub-band energy levels and the inversion charge centroids have been obtained. The analytical results are compared with the numerical data and a good agreement between the analytical and numerical is found.

Original languageEnglish
Pages (from-to)845-850
Number of pages6
JournalMolecular Simulation
Volume31
Issue number12
DOIs
StatePublished - 15 Oct 2005

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