A compact model for rapidly shrinking MOSFETs

Chen-Ming Hu*

*Corresponding author for this work

Research output: Contribution to journalConference article

2 Scopus citations

Abstract

BSIM (Berkeley Short-channel IGFET Model) SPICE model for circuit simulation supports the shrinking of MOSFETs by timely modeling new device physics that is expected to be important in scaled devices. Several examples of these physical models are presented in this paper.

Original languageEnglish
Pages (from-to)285-288
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1 Dec 2001
EventIEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States
Duration: 2 Dec 20015 Dec 2001

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