A compact low DC consumption 24-GHz cascode HEMT VGA

Zuo-Min Tsai; Jui Chi Kao; Kun You Lin; Huei Wang

doi:10.1109/APMC.2009.5384354

A compact low DC consumption 24-GHz cascode HEMT VGA

Zuo-Min Tsai ^*, Jui Chi Kao, Kun You Lin, Huei Wang

^*Corresponding author for this work

Institute of Communications Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

This paper presents a 24-GHz high gain and wide gain control range in cascode device technique. The VGA is implemented in 0.15-μm GaAs PHEMT process. This VGA has 15.7 dB gain and 18.5% 3-dB bandwidth and over 20 dB gain control range at 24 GHz, with a low dc power of 13.5 mW. These results indicate that cascode technique is suitable for low power consumption and small chip size for high frequency amplifiers using GaAs pHEMT process.

Original language	English
Title of host publication	APMC 2009 - Asia Pacific Microwave Conference 2009
Pages	1625-1627
Number of pages	3
DOIs	https://doi.org/10.1109/APMC.2009.5384354
State	Published - 1 Dec 2009
Event	Asia Pacific Microwave Conference 2009, APMC 2009 - Singapore, Singapore Duration: 7 Dec 2009 → 10 Dec 2009

Publication series

Name	APMC 2009 - Asia Pacific Microwave Conference 2009

Conference

Conference	Asia Pacific Microwave Conference 2009, APMC 2009
Country	Singapore
City	Singapore
Period	7/12/09 → 10/12/09

Keywords

GaAs
PHEMT
VGA

Access to Document

10.1109/APMC.2009.5384354

Link to publication in Scopus

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title = "A compact low DC consumption 24-GHz cascode HEMT VGA",

abstract = "This paper presents a 24-GHz high gain and wide gain control range in cascode device technique. The VGA is implemented in 0.15-μm GaAs PHEMT process. This VGA has 15.7 dB gain and 18.5% 3-dB bandwidth and over 20 dB gain control range at 24 GHz, with a low dc power of 13.5 mW. These results indicate that cascode technique is suitable for low power consumption and small chip size for high frequency amplifiers using GaAs pHEMT process.",

keywords = "GaAs, PHEMT, VGA",

author = "Zuo-Min Tsai and Kao, {Jui Chi} and Lin, {Kun You} and Huei Wang",

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AU - Tsai , Zuo-Min

AU - Kao, Jui Chi

AU - Lin, Kun You

AU - Wang, Huei

PY - 2009/12/1

Y1 - 2009/12/1

N2 - This paper presents a 24-GHz high gain and wide gain control range in cascode device technique. The VGA is implemented in 0.15-μm GaAs PHEMT process. This VGA has 15.7 dB gain and 18.5% 3-dB bandwidth and over 20 dB gain control range at 24 GHz, with a low dc power of 13.5 mW. These results indicate that cascode technique is suitable for low power consumption and small chip size for high frequency amplifiers using GaAs pHEMT process.

AB - This paper presents a 24-GHz high gain and wide gain control range in cascode device technique. The VGA is implemented in 0.15-μm GaAs PHEMT process. This VGA has 15.7 dB gain and 18.5% 3-dB bandwidth and over 20 dB gain control range at 24 GHz, with a low dc power of 13.5 mW. These results indicate that cascode technique is suitable for low power consumption and small chip size for high frequency amplifiers using GaAs pHEMT process.

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