A dual-band direct-conversion RF transceiver for 802.11a/b/g WLAN is implemented in 0.18μm CMOS technology with 6mm2 die size and 182mW power dissipation while transmitting 1dBm at 5GHz. The receiver achieves 5dB NF, -8dBm IIP3 (high LNA gain), 96dB total gain, and -31.4dB EVM. The transmitter achieves 1dBm and 2.5dBm linear output power at 5GHz and 2.4GHz, respectively, with an EVM less than -31dB.
|Journal||Digest of Technical Papers - IEEE International Solid-State Circuits Conference|
|State||Published - 6 Dec 2005|
|Event||2005 IEEE International Solid-State Circuits Conference, ISSCC - San Francisco, CA, United States|
Duration: 6 Feb 2005 → 10 Feb 2005