A CMOS integrated w-band passive imager

Qun Jane Gu*, Kang Yang, Yi Xue, Zhiwei Xu, Adrian Tang, C. C. Nien, T. H. Wu, Jenn-Hawn Tarng, Mau-Chung Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

This brief presents an integrated W-band passive imager, including a low-noise amplifier, a Dicke switch, a detector, a low-pass filter, a programmable-gain amplifier, and a 10-bit 20-MHz pipeline analog-to-digital converter (ADC). With digital outputs, the imager is ready to be interfaced with a digital signal processor to complete its system implementation. The chip is realized in a 65-nm CMOS technology. The measured average noise-equivalent power and responsivity are 32 fW/Hz and 103 MV/W, respectively, which represents a noise-equivalent temperature difference of 1.0 K with 30-ms integration time. The integrated imager occupies a silicon area of 1.17 mm 2 and burns 151 mW of power. To the authors' best knowledge, this is the first time that a millimeter-wave passive imager is integrated with an on-chip ADC to generate digital outputs.

Original languageEnglish
Article number6387588
Pages (from-to)736-740
Number of pages5
JournalIEEE Transactions on Circuits and Systems I: Regular Papers
Volume59
Issue number11
DOIs
StatePublished - 26 Dec 2012

Keywords

  • Analog-to-digital converter (ADC)
  • CMOS
  • passive imager
  • W-band

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