A CMOS integrated w-band passive imager

Qun Jane Gu; Kang Yang; Yi Xue; Zhiwei Xu; Adrian Tang; C. C. Nien; T. H. Wu; Jenn-Hawn Tarng; Mau-Chung Chang

doi:10.1109/TCSII.2012.2228393

A CMOS integrated w-band passive imager

Qun Jane Gu^*, Kang Yang, Yi Xue, Zhiwei Xu, Adrian Tang, C. C. Nien, T. H. Wu, Jenn-Hawn Tarng, Mau-Chung Chang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

This brief presents an integrated W-band passive imager, including a low-noise amplifier, a Dicke switch, a detector, a low-pass filter, a programmable-gain amplifier, and a 10-bit 20-MHz pipeline analog-to-digital converter (ADC). With digital outputs, the imager is ready to be interfaced with a digital signal processor to complete its system implementation. The chip is realized in a 65-nm CMOS technology. The measured average noise-equivalent power and responsivity are 32 fW/Hz and 103 MV/W, respectively, which represents a noise-equivalent temperature difference of 1.0 K with 30-ms integration time. The integrated imager occupies a silicon area of 1.17 mm ² and burns 151 mW of power. To the authors' best knowledge, this is the first time that a millimeter-wave passive imager is integrated with an on-chip ADC to generate digital outputs.

Original language	English
Article number	6387588
Pages (from-to)	736-740
Number of pages	5
Journal	IEEE Transactions on Circuits and Systems I: Regular Papers
Volume	59
Issue number	11
DOIs	https://doi.org/10.1109/TCSII.2012.2228393
State	Published - 26 Dec 2012

Keywords

Analog-to-digital converter (ADC)
CMOS
passive imager
W-band

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@article{566cd73ade584dc2addf6dc41654d5dc,

title = "A CMOS integrated w-band passive imager",

abstract = " This brief presents an integrated W-band passive imager, including a low-noise amplifier, a Dicke switch, a detector, a low-pass filter, a programmable-gain amplifier, and a 10-bit 20-MHz pipeline analog-to-digital converter (ADC). With digital outputs, the imager is ready to be interfaced with a digital signal processor to complete its system implementation. The chip is realized in a 65-nm CMOS technology. The measured average noise-equivalent power and responsivity are 32 fW/Hz and 103 MV/W, respectively, which represents a noise-equivalent temperature difference of 1.0 K with 30-ms integration time. The integrated imager occupies a silicon area of 1.17 mm 2 and burns 151 mW of power. To the authors' best knowledge, this is the first time that a millimeter-wave passive imager is integrated with an on-chip ADC to generate digital outputs.",

keywords = "Analog-to-digital converter (ADC), CMOS, passive imager, W-band",

author = "Gu, {Qun Jane} and Kang Yang and Yi Xue and Zhiwei Xu and Adrian Tang and Nien, {C. C.} and Wu, {T. H.} and Jenn-Hawn Tarng and Mau-Chung Chang",

year = "2012",

month = dec,

day = "26",

doi = "10.1109/TCSII.2012.2228393",

language = "English",

volume = "59",

pages = "736--740",

journal = "IEEE Transactions on Circuits and Systems I: Regular Papers",

issn = "1549-8328",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

TY - JOUR

T1 - A CMOS integrated w-band passive imager

AU - Gu, Qun Jane

AU - Yang, Kang

AU - Xue, Yi

AU - Xu, Zhiwei

AU - Tang, Adrian

AU - Nien, C. C.

AU - Wu, T. H.

AU - Tarng, Jenn-Hawn

AU - Chang, Mau-Chung

PY - 2012/12/26

Y1 - 2012/12/26

N2 - This brief presents an integrated W-band passive imager, including a low-noise amplifier, a Dicke switch, a detector, a low-pass filter, a programmable-gain amplifier, and a 10-bit 20-MHz pipeline analog-to-digital converter (ADC). With digital outputs, the imager is ready to be interfaced with a digital signal processor to complete its system implementation. The chip is realized in a 65-nm CMOS technology. The measured average noise-equivalent power and responsivity are 32 fW/Hz and 103 MV/W, respectively, which represents a noise-equivalent temperature difference of 1.0 K with 30-ms integration time. The integrated imager occupies a silicon area of 1.17 mm 2 and burns 151 mW of power. To the authors' best knowledge, this is the first time that a millimeter-wave passive imager is integrated with an on-chip ADC to generate digital outputs.

AB - This brief presents an integrated W-band passive imager, including a low-noise amplifier, a Dicke switch, a detector, a low-pass filter, a programmable-gain amplifier, and a 10-bit 20-MHz pipeline analog-to-digital converter (ADC). With digital outputs, the imager is ready to be interfaced with a digital signal processor to complete its system implementation. The chip is realized in a 65-nm CMOS technology. The measured average noise-equivalent power and responsivity are 32 fW/Hz and 103 MV/W, respectively, which represents a noise-equivalent temperature difference of 1.0 K with 30-ms integration time. The integrated imager occupies a silicon area of 1.17 mm 2 and burns 151 mW of power. To the authors' best knowledge, this is the first time that a millimeter-wave passive imager is integrated with an on-chip ADC to generate digital outputs.

KW - Analog-to-digital converter (ADC)

KW - CMOS

KW - passive imager

KW - W-band

UR - http://www.scopus.com/inward/record.url?scp=84872110342&partnerID=8YFLogxK

U2 - 10.1109/TCSII.2012.2228393

DO - 10.1109/TCSII.2012.2228393

M3 - Article

AN - SCOPUS:84872110342

VL - 59

SP - 736

EP - 740

JO - IEEE Transactions on Circuits and Systems I: Regular Papers

JF - IEEE Transactions on Circuits and Systems I: Regular Papers

SN - 1549-8328

IS - 11

M1 - 6387588

ER -

A CMOS integrated w-band passive imager

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Keywords

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