A CMOS dual-mode RF front-end receiver for GSM and WCDMA applications

Chun Lin Ko*, Ming Ching Kuo, Chien-Nan Kuo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

A dual-mode, triple-band RF front-end receiver for GSM900, DCS1800 and WCDMA is presented in this paper. This chip uses low-IF and zero-IF receiver architectures for GSM and WCDMA respectively to fulfill the entirely different system requirements of the two standards. It consists of three parallel LNAs and down-conversion mixers with on-chip LO I/Q generations. The receiver front-end is implemented in a standard 0.25 μm CMOS process and consumes about 30-mA from a 2.7-V power supply for all modes. The measured double-side band noise figure and voltage gain are 3 dB, 36 dB for the GSM900, 5.9 dB, 31 dB for the DCS1800, and 4.3 dB, 29.6 dB for the WCDMA, respectively.

Original languageEnglish
Pages (from-to)1218-1224
Number of pages7
JournalIEICE Transactions on Electronics
VolumeE88-C
Issue number6
DOIs
StatePublished - 1 Jan 2005

Keywords

  • CMOS RF receiver
  • Dual-mode
  • GSM
  • W-CDMA

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