A CMOS-compatible poly-si nanowire device with hybrid sensor/memory characteristics for system-on-chip applications

Min Cheng Chen*, Hao Yu Chen, Chia Yi Lin, Chao-Hsin Chien, Tsung Fan Hsieh, Jim Tong Horng, Jian Tai Qiu, Chien Chao Huang, Chia Hua Ho, Fu Liang Yang

*Corresponding author for this work

Research output: Contribution to journalArticle

15 Scopus citations

Abstract

This paper reports a versatile nano-sensor technology using "top-down" poly-silicon nanowire field-effect transistors (FETs) in the conventional Complementary Metal-Oxide Semiconductor (CMOS)-compatible semiconductor process. The nanowire manufacturing technique reduced nanowire width scaling to 50 nm without use of extra lithography equipment, and exhibited superior device uniformity. These n type polysilicon nanowire FETs have positive pH sensitivity (100 mV/pH) and sensitive deoxyribonucleic acid (DNA) detection ability (100 pM) at normal system operation voltages. Specially designed oxide-nitride-oxide buried oxide nanowire realizes an electrically Vth-adjustable sensor to compensate device variation. These nanowire FETs also enable non-volatile memory application for a large and steady Vth adjustment window (>2 V Programming/ Erasing window). The CMOS-compatible manufacturing technique of polysilicon nanowire FETs offers a possible solution for commercial System-on-Chip biosensor application, which enables portable physiology monitoring and in situ recording.

Original languageEnglish
Pages (from-to)3952-3963
Number of pages12
JournalSensors
Volume12
Issue number4
DOIs
StatePublished - 1 Apr 2012

Keywords

  • Nano-sensor fabrication
  • Nanowire FET
  • Nonvolatile memories
  • Semiconductive sensors

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    Chen, M. C., Chen, H. Y., Lin, C. Y., Chien, C-H., Hsieh, T. F., Horng, J. T., Qiu, J. T., Huang, C. C., Ho, C. H., & Yang, F. L. (2012). A CMOS-compatible poly-si nanowire device with hybrid sensor/memory characteristics for system-on-chip applications. Sensors, 12(4), 3952-3963. https://doi.org/10.3390/s120403952