A CMOS capacitive dopamine sensor with Sub-nM detection resolution

Shi Wei Wang*, Chih Heng Lin, Yuh-Shyong Yang, Michael S.C. Lu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

Interdigitated microelectrodes integrated with CMOS sensing circuitry are presented in this work for detection of the neurotransmitter dopamine and as an immunosensor with sensitivity enhanced by gold nanoparticles. Microelectrodes covered by the silicon dioxide layer are fabricated through a maskless post-CMOS process. Charged biomolecules bind to the functionalized oxide surface after immobilization, producing a capacitive change for the underlying electrodes. Three electrode designs with gaps from 0.5 μm to 1 μm and capacitance values from 13 fF to 925 fF are tested. The capacitance increases with respect to the concentrations of nanoparticle and dopamine. The minimum detectable concentration of dopamine is 540 pM at a 1-Hz bandwidth.

Original languageEnglish
Title of host publicationIEEE Sensors 2009 Conference - SENSORS 2009
Pages400-404
Number of pages5
DOIs
StatePublished - 1 Dec 2009
EventIEEE Sensors 2009 Conference - SENSORS 2009 - Christchurch, New Zealand
Duration: 25 Oct 200928 Oct 2009

Publication series

NameProceedings of IEEE Sensors

Conference

ConferenceIEEE Sensors 2009 Conference - SENSORS 2009
CountryNew Zealand
CityChristchurch
Period25/10/0928/10/09

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