A CMOS bandgap reference circuit for sub-1-V operation without using extra low-threshold-voltage device

Ming-Dou Ker; Jung Sheng Chen; Ching Yun Chu

doi:10.1093/ietele/e88-c.11.2150

A CMOS bandgap reference circuit for sub-1-V operation without using extra low-threshold-voltage device

Ming-Dou Ker^*, Jung Sheng Chen, Ching Yun Chu

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article

7 Scopus citations

Abstract

A new sub-1-V CMOS bandgap voltage reference without using low-threshold-voltage device is presented in this paper. The new proposed sub-1-V bandgap reference with startup circuit has been successfully verified in a standard 0.25-μm CMOS process, where the occupied silicon area is only 177 μm × 106μm. The experimental results have shown that, with the minimum supply voltage of 0.85 V, the output reference voltage is 238.2mV at room temperature, and the temperature coefficient is 58.1 ppm/°C from-10°C to 120deg;C without laser trimming. Underthe supply voltage of 0.85V, the average power supply rejection ratio (PSRR) is -33.2dB at 10 kHz.

Original language	English
Pages (from-to)	2150-2154
Number of pages	5
Journal	IEICE Transactions on Electronics
Volume	E88-C
Issue number	11
DOIs	https://doi.org/10.1093/ietele/e88-c.11.2150
State	Published - 1 Nov 2005

Keywords

Bandgap voltage reference
PSRR (power supply rejection ratio)
Startup circuit
Temperature co-efficient
Voltage reference

Access to Document

10.1093/ietele/e88-c.11.2150

Link to publication in Scopus

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title = "A CMOS bandgap reference circuit for sub-1-V operation without using extra low-threshold-voltage device",

abstract = "A new sub-1-V CMOS bandgap voltage reference without using low-threshold-voltage device is presented in this paper. The new proposed sub-1-V bandgap reference with startup circuit has been successfully verified in a standard 0.25-μm CMOS process, where the occupied silicon area is only 177 μm × 106μm. The experimental results have shown that, with the minimum supply voltage of 0.85 V, the output reference voltage is 238.2mV at room temperature, and the temperature coefficient is 58.1 ppm/°C from-10°C to 120deg;C without laser trimming. Underthe supply voltage of 0.85V, the average power supply rejection ratio (PSRR) is -33.2dB at 10 kHz.",

keywords = "Bandgap voltage reference, PSRR (power supply rejection ratio), Startup circuit, Temperature co-efficient, Voltage reference",

author = "Ming-Dou Ker and Chen, {Jung Sheng} and Chu, {Ching Yun}",

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AB - A new sub-1-V CMOS bandgap voltage reference without using low-threshold-voltage device is presented in this paper. The new proposed sub-1-V bandgap reference with startup circuit has been successfully verified in a standard 0.25-μm CMOS process, where the occupied silicon area is only 177 μm × 106μm. The experimental results have shown that, with the minimum supply voltage of 0.85 V, the output reference voltage is 238.2mV at room temperature, and the temperature coefficient is 58.1 ppm/°C from-10°C to 120deg;C without laser trimming. Underthe supply voltage of 0.85V, the average power supply rejection ratio (PSRR) is -33.2dB at 10 kHz.

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