A Charge Conserving Non-Quasi-Static (NQS) MOSFET Model for SPICE Transient Analysis

Hong June Park, Ping Keung Ko, Chen-Ming Hu

Research output: Contribution to journalArticlepeer-review

20 Scopus citations


An analytic charge conserving non-quasi-static (NQS) model has been derived for long channel MOSFET’s and has been implemented in SPICE3. The model is based on approximate solutions to the transient current continuity equation, and analytic equations have been derived for node charges using the charge-sheet formulation. The NQS effects in several test circuits which include a pass transistor, a CMOS inverter chain, and a differential sample-hold circuit, are simulated. Excellent agreements have been observed among this work, PISCES (2-D device simulation), the 1-D numerical simulation, the multiple lump model, and CODECS (a mixed device and circuit simulation). However, large differences have been observed between this work and conventional quasi-static (QS) models. The model computation time of this work implemented in SPICE3 is about 2–3 times larger than those of QS models (BSIM, Level-2 Meyer) in SPICE3.

Original languageEnglish
Pages (from-to)629-642
Number of pages14
JournalIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Issue number5
StatePublished - 1 Jan 1991

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