A Charge Conserving Non-Quasi-Static (NQS) MOSFET Model for SPICE Transient Analysis

Hong June Park; Ping Keung Ko; Chen-Ming Hu

doi:10.1109/43.79500

A Charge Conserving Non-Quasi-Static (NQS) MOSFET Model for SPICE Transient Analysis

Hong June Park, Ping Keung Ko, Chen-Ming Hu

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

An analytic charge conserving non-quasi-static (NQS) model has been derived for long channel MOSFET’s and has been implemented in SPICE3. The model is based on approximate solutions to the transient current continuity equation, and analytic equations have been derived for node charges using the charge-sheet formulation. The NQS effects in several test circuits which include a pass transistor, a CMOS inverter chain, and a differential sample-hold circuit, are simulated. Excellent agreements have been observed among this work, PISCES (2-D device simulation), the 1-D numerical simulation, the multiple lump model, and CODECS (a mixed device and circuit simulation). However, large differences have been observed between this work and conventional quasi-static (QS) models. The model computation time of this work implemented in SPICE3 is about 2–3 times larger than those of QS models (BSIM, Level-2 Meyer) in SPICE3.

Original language	English
Pages (from-to)	629-642
Number of pages	14
Journal	IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Volume	10
Issue number	5
DOIs	https://doi.org/10.1109/43.79500
State	Published - 1 Jan 1991

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title = "A Charge Conserving Non-Quasi-Static (NQS) MOSFET Model for SPICE Transient Analysis",

abstract = "An analytic charge conserving non-quasi-static (NQS) model has been derived for long channel MOSFET{\textquoteright}s and has been implemented in SPICE3. The model is based on approximate solutions to the transient current continuity equation, and analytic equations have been derived for node charges using the charge-sheet formulation. The NQS effects in several test circuits which include a pass transistor, a CMOS inverter chain, and a differential sample-hold circuit, are simulated. Excellent agreements have been observed among this work, PISCES (2-D device simulation), the 1-D numerical simulation, the multiple lump model, and CODECS (a mixed device and circuit simulation). However, large differences have been observed between this work and conventional quasi-static (QS) models. The model computation time of this work implemented in SPICE3 is about 2–3 times larger than those of QS models (BSIM, Level-2 Meyer) in SPICE3.",

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