A Charge-Based Capacitance Model of Short-Channel MOSFET's

Steve S. Chung*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

A new quasistatic two-dimensional (2-D) intrinsic capacitance model for short-channel MOSFET's has been proposed. It was derived based on a physically based charge sharing scheme and implemented using a quasistatic solution of a MOS device simulator. 2-D field-induced mobility degradation, velocity saturation, and short channel effects are included in the model. In this model, charge conservation holds and channel charge partitioning are properly treated. The simulation results clearly show the importance of 2-D field-induced effects to short-channel MOS devices. Comparison of the simulated results with reported experimentally measured data shows that the proposed model is far more reliable than the analytical model. The proposed method can be used to link a device simulator and a circuit simulator for accurate timing calculation in both digital and analog MOS integrated circuits.

Original languageEnglish
Article number21813
Pages (from-to)1-7
Number of pages7
JournalIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Volume8
Issue number1
DOIs
StatePublished - 1 Jan 1989

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