A channel field model of SOI MOSFET

Hsing Jen Wann, Ping K. Ko, Chen-Ming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

The peak channel electric field Em of MOSFET is a monitor of the hot-carrier-induced device degradation[l]. The quasitwo-dimensional model for bulk MOSFET predicts Em to be a function of device parameters including the drain junction depth Xj [2]. In SOI MOSFET there is no clear definition of Xj. To use the silicon film thickness tsi for X, in Em calculation for SOI MOSFET [3-5] overestimates the hotcarrier currents[4]. We present a model that includes the effect of the lateral doping gradient of the drain junction explicitly. The results agree with two dimensional device simulations.

Original languageEnglish
Title of host publication1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Proceedings of Technical Papers
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages133-137
Number of pages5
ISBN (Electronic)0780309782
DOIs
StatePublished - 1 Jan 1993
Event1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Taipei, Taiwan
Duration: 12 May 199314 May 1993

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
ISSN (Print)1930-8868

Conference

Conference1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993
CountryTaiwan
CityTaipei
Period12/05/9314/05/93

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