A channel field model of SOI MOSFET

Hsing Jen Wann; Ping K. Ko; Chen-Ming Hu

doi:10.1109/VTSA.1993.263644

A channel field model of SOI MOSFET

Hsing Jen Wann, Ping K. Ko, Chen-Ming Hu

International College of Semiconductor Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

The peak channel electric field E_m of MOSFET is a monitor of the hot-carrier-induced device degradation[l]. The quasitwo-dimensional model for bulk MOSFET predicts E_m to be a function of device parameters including the drain junction depth X_j [2]. In SOI MOSFET there is no clear definition of X_j. To use the silicon film thickness t_si for X, in E_m calculation for SOI MOSFET [3-5] overestimates the hotcarrier currents[4]. We present a model that includes the effect of the lateral doping gradient of the drain junction explicitly. The results agree with two dimensional device simulations.

Original language	English
Title of host publication	1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Proceedings of Technical Papers
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	133-137
Number of pages	5
ISBN (Electronic)	0780309782
DOIs	https://doi.org/10.1109/VTSA.1993.263644
State	Published - 1 Jan 1993
Event	1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Taipei, Taiwan Duration: 12 May 1993 → 14 May 1993

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings
ISSN (Print)	1930-8868

Conference

Conference	1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993
Country	Taiwan
City	Taipei
Period	12/05/93 → 14/05/93

Access to Document

10.1109/VTSA.1993.263644

Fingerprint Dive into the research topics of 'A channel field model of SOI MOSFET'. Together they form a unique fingerprint.

Cite this

Wann, H. J., Ko, P. K., & Hu, C-M. (1993). A channel field model of SOI MOSFET. In 1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Proceedings of Technical Papers (pp. 133-137). [263644] (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VTSA.1993.263644

Wann, Hsing Jen ; Ko, Ping K. ; Hu, Chen-Ming. / A channel field model of SOI MOSFET. 1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Proceedings of Technical Papers. Institute of Electrical and Electronics Engineers Inc., 1993. pp. 133-137 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

@inproceedings{453103137b444bd2a1f5148ad0693a4c,

title = "A channel field model of SOI MOSFET",

abstract = "The peak channel electric field Em of MOSFET is a monitor of the hot-carrier-induced device degradation[l]. The quasitwo-dimensional model for bulk MOSFET predicts Em to be a function of device parameters including the drain junction depth Xj [2]. In SOI MOSFET there is no clear definition of Xj. To use the silicon film thickness tsi for X, in Em calculation for SOI MOSFET [3-5] overestimates the hotcarrier currents[4]. We present a model that includes the effect of the lateral doping gradient of the drain junction explicitly. The results agree with two dimensional device simulations.",

author = "Wann, {Hsing Jen} and Ko, {Ping K.} and Chen-Ming Hu",

year = "1993",

month = jan,

day = "1",

doi = "10.1109/VTSA.1993.263644",

language = "English",

series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "133--137",

booktitle = "1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Proceedings of Technical Papers",

address = "United States",

note = "null ; Conference date: 12-05-1993 Through 14-05-1993",

}

Wann, HJ, Ko, PK & Hu, C-M 1993, A channel field model of SOI MOSFET. in 1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Proceedings of Technical Papers., 263644, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 133-137, 1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993, Taipei, Taiwan, 12/05/93. https://doi.org/10.1109/VTSA.1993.263644

A channel field model of SOI MOSFET. / Wann, Hsing Jen; Ko, Ping K.; Hu, Chen-Ming.

1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Proceedings of Technical Papers. Institute of Electrical and Electronics Engineers Inc., 1993. p. 133-137 263644 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A channel field model of SOI MOSFET

AU - Wann, Hsing Jen

AU - Ko, Ping K.

AU - Hu, Chen-Ming

PY - 1993/1/1

Y1 - 1993/1/1

N2 - The peak channel electric field Em of MOSFET is a monitor of the hot-carrier-induced device degradation[l]. The quasitwo-dimensional model for bulk MOSFET predicts Em to be a function of device parameters including the drain junction depth Xj [2]. In SOI MOSFET there is no clear definition of Xj. To use the silicon film thickness tsi for X, in Em calculation for SOI MOSFET [3-5] overestimates the hotcarrier currents[4]. We present a model that includes the effect of the lateral doping gradient of the drain junction explicitly. The results agree with two dimensional device simulations.

AB - The peak channel electric field Em of MOSFET is a monitor of the hot-carrier-induced device degradation[l]. The quasitwo-dimensional model for bulk MOSFET predicts Em to be a function of device parameters including the drain junction depth Xj [2]. In SOI MOSFET there is no clear definition of Xj. To use the silicon film thickness tsi for X, in Em calculation for SOI MOSFET [3-5] overestimates the hotcarrier currents[4]. We present a model that includes the effect of the lateral doping gradient of the drain junction explicitly. The results agree with two dimensional device simulations.

UR - http://www.scopus.com/inward/record.url?scp=11644274332&partnerID=8YFLogxK

U2 - 10.1109/VTSA.1993.263644

DO - 10.1109/VTSA.1993.263644

M3 - Conference contribution

AN - SCOPUS:11644274332

T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

SP - 133

EP - 137

BT - 1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Proceedings of Technical Papers

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 12 May 1993 through 14 May 1993

ER -

Wann HJ, Ko PK, Hu C-M. A channel field model of SOI MOSFET. In 1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Proceedings of Technical Papers. Institute of Electrical and Electronics Engineers Inc. 1993. p. 133-137. 263644. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.1993.263644

A channel field model of SOI MOSFET

Abstract

Publication series

Conference

Access to Document

Other files and links

Cite this