A carbon nanotube field effect transistor with tunable conduction-type by electrostatic effects

Bae Horng Chen, Jeng Hua Wei, Po Yuan Lo, Hung Hsiang Wang, Ming Jinn Lai, Ming Jinn Tsai, Tien-Sheng Chao*, Horng-Chih Lin, Tiao Yuan Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

In this paper, we report a conduction-type-tunable carbon nanotube field effect transistor (CNT-FET) with double-gate structure (DG CNT-FET). In this study, a specially designed narrow top-gate is created to modulate the energy band in the middle region of a single CNT. In the proposed DG device structure, the top-gate and bottom-gate biases exhibit independent modulation behaviors. Depending on whether a positive or negative bias is applied to the top-gate, the CNT-FET can be operated in either n- or p-type conduction. Energy band diagram conducive to the physical mechanisms of the proposed DG CNT-FET device structure is proposed. Based on the proposed hypothesis, ambipolar CNT-FETs can indeed be converted to n- or p-type-like behaviors.

Original languageEnglish
Pages (from-to)1341-1348
Number of pages8
JournalSolid-State Electronics
Volume50
Issue number7-8
DOIs
StatePublished - 1 Jul 2006

Keywords

  • Ambipolar CNT-FETs
  • Carbon nanotube field effect transistor (CNT-FET)
  • Double-gate CNT-FET
  • Modulate
  • n- or p-type

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