An integrated TCAD simulation system from process simulation to circuit simulation is established. Physical model parameters such as in the mobility and the coefficients associated with hot carrier effect have been calibrated against experimental data which enable accaurate simulated device characteristics in comparison with experimental results. Its utilization in the design is demonstrated by a reduction of the hot carrier effect in a half-micron LDD MOS device and process.
|Journal||Proceedings of the Custom Integrated Circuits Conference|
|State||Published - 1 Dec 1992|
|Event||14th Annual Custom Integrated Circuits Conference, CICC 1992 - Boston, MA, United States|
Duration: 3 May 1992 → 6 May 1992