A calibrated physically-based model for submicron MOS process and device simulations

J. J. Yang*, Steve S. Chung, C. H. Lee

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

An integrated TCAD simulation system from process simulation to circuit simulation is established. Physical model parameters such as in the mobility and the coefficients associated with hot carrier effect have been calibrated against experimental data which enable accaurate simulated device characteristics in comparison with experimental results. Its utilization in the design is demonstrated by a reduction of the hot carrier effect in a half-micron LDD MOS device and process.

Original languageEnglish
Article number5727357
JournalProceedings of the Custom Integrated Circuits Conference
DOIs
StatePublished - 1 Dec 1992
Event14th Annual Custom Integrated Circuits Conference, CICC 1992 - Boston, MA, United States
Duration: 3 May 19926 May 1992

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