A body-contact SOI MOSFET model for circuit simulation

Pin Su, S. K.H. Fung, F. Assaderaghi, Chen-Ming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

6 Scopus citations

Abstract

Making contact to the body of a partially depleted (PD) SOI transistor offers another degree of design freedom. For example, DTMOS (Assaderaghi et al., 1994) has demonstrated that the body-contact can be used to enhance the power/delay performance. It has also been shown that the body-contact plays an important role in eliminating the floating-body instability (Chuang, 1998) for sensitive circuits. A complete SPICE model that explicitly addresses the nonidealities of the body-contact is surely needed for SOI circuit design. Here, we present a compact body-contact SOI MOSFET model that has been implemented in BSIMPD2.0 for circuit simulation.

Original languageEnglish
Title of host publication1999 IEEE International SOI Conference, SOI 1999 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages50-51
Number of pages2
ISBN (Print)0780354567, 9780780354562
DOIs
StatePublished - 1 Jan 1999
Event25th Annual IEEE International Silicon-on-Insulator Conference, SOI 19999 - Rohnert Park, United States
Duration: 4 Oct 19997 Oct 1999

Publication series

Name1999 IEEE International SOI Conference, SOI 1999 - Proceedings

Conference

Conference25th Annual IEEE International Silicon-on-Insulator Conference, SOI 19999
CountryUnited States
CityRohnert Park
Period4/10/997/10/99

Fingerprint Dive into the research topics of 'A body-contact SOI MOSFET model for circuit simulation'. Together they form a unique fingerprint.

Cite this