Ohmic contacts with low resistance are fabricated on n-type GaN films using Ti/Ag bilayer metallization. The GaN films are grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD) with Si as the dopant. Ohmic characteristics are studied for films with carrier concentration range from 1.5×1017 to 1.7×1019 cm-3. The lowest value for the specific contact resistivity of 6.5×10-5 cm2 is obtained without annealing. The barrier height of Ti on GaN is calculated to be 0.067 eV.