A bilayer Ti/Ag ohmic contact for highly doped n-type GaN films

J. D. Guo*, C. I. Lin, M. S. Feng, Fu-Ming Pan, G. C. Chi, C. T. Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

70 Scopus citations


Ohmic contacts with low resistance are fabricated on n-type GaN films using Ti/Ag bilayer metallization. The GaN films are grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD) with Si as the dopant. Ohmic characteristics are studied for films with carrier concentration range from 1.5×1017 to 1.7×1019 cm-3. The lowest value for the specific contact resistivity of 6.5×10-5 cm2 is obtained without annealing. The barrier height of Ti on GaN is calculated to be 0.067 eV.

Original languageEnglish
Pages (from-to)235-237
Number of pages3
JournalApplied Physics Letters
Issue number2
StatePublished - 1 Dec 1996

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