A 950-pW, 39-pJ/Conversion Leakage-Based Temperature-to-Digital Converter with 43mk Resolution

Cheng Ze Shao, Yu Te Liao

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

This paper presents a power-efficient temperature-to-digital convertor using a leakage-based ring oscillator. The reversely-biased transistors are added between the supply rails and the core circuit to limit power consumption and enhance temperature-to-current conversion gain. A design of temperature-insensitive sampling clock signal results in better conversion linearity/accuracy. The design was fabricated in a 180-nm CMOS process with an active chip area of 0.04 mm2. The design can achieve a resolution of 43 mK at 20 °C in 100 measurements and a temperature inaccuracy of -1.6/+2.1 °C over a temperature range of 20-80 °C. At a 0.55 V supply, the power consumption of the whole system is 950 pW, the conversion time is 40.8 ms, and the resulted energy efficiency is 39 pJ/conversion.

Original languageEnglish
Title of host publication2020 IEEE Asian Solid-State Circuits Conference, A-SSCC 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728184364
DOIs
StatePublished - 9 Nov 2020
Event16th IEEE Asian Solid-State Circuits Conference, A-SSCC 2020 - Virtual, Hiroshima, Japan
Duration: 9 Nov 202011 Nov 2020

Publication series

Name2020 IEEE Asian Solid-State Circuits Conference, A-SSCC 2020

Conference

Conference16th IEEE Asian Solid-State Circuits Conference, A-SSCC 2020
CountryJapan
CityVirtual, Hiroshima
Period9/11/2011/11/20

Keywords

  • CMOS
  • Leakage-based oscillator
  • Temperature sensor
  • Temperature-insensitive sampling clock signal

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