A 90nm CMOS MS/RF based Foundry SOC Technology Comprising Superb 185 GHz fT RFMOS and Versatile, high-Q Passive Components for Cost/Performance Optimization

C. H. Chen*, C. S. Chang, C. P. Chao, J. F. Kuan, C. L. Chang, S. H. Wang, H. M. Hsu, W. Y. Lien, Y. C. Tsai, H. C. Lin, C. C. Wu, C. F. Huang, S. M. Chen, P. M. Tseng, C. W. Chen, C. C. Ku, T. Y. Lin, C. F. Chang, H. J. Lin, M. R. TsaiS. Chen, C. F. Chen, M. Y. Wei, Y. J. Wang, J. C.H. Lin, W. M. Chen, C. C. Chang, M. C. King, C. M. Huang, C. T. Lin, J. C. Guo, G. J. Chern, D. D. Tang, J. Y.C. Sun

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

29 Scopus citations

Abstract

A versatile mixed-signal and RF (MS/RF) technology based on a foundry 90nm CMOS process was demonstrated with excellent MOS transistor fT at 160-185 GHz. Passive elements of various process schemes were fabricated for cost/performance evaluation. To realize low-cost system-on-chip (SOC), passive elements like 0.9um Cu inductors and metal-stacked capacitors (MOM) were implemented using standard logic back-end process. For high performance MS/RF solutions, inductors with 3 μm Cu and ultra thick 6 μm Cu top metal were fabricated to achieve high quality factors, Q> 15 at 1GHz and peak Q>20. Precision metal-sandwiched capacitors (MIM) with unit capacitances of 1.0, 1.5 and 2.0 fF/μm2 were characterized and compared. Comparable or better matching was observed for MIM with higher unit capacitance, implying the possibility for chip size reduction. Specifically, the advantage of better MIM matching was demonstrated for the first time on the data resolution improvement of an A-to-D converter.

Original languageEnglish
Pages (from-to)39-42
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1 Dec 2003
EventIEEE International Electron Devices Meeting - Washington, DC, United States
Duration: 8 Dec 200310 Dec 2003

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