A 90-GHz power amplifier with 18-dBm output power and 26 GHz 3-dB bandwidth in standard RF 65-nm CMOS technology

Zuo-Min Tsai , Yuan Hung Hsiao, Hsin Chiang Liao, Huei Wang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

8 Scopus citations

Abstract

A 90 GHz power amplifier for high output power with 26 GHz 3-dB bandwidth is proposed and fabricated using 65-nm CMOS technology. A 16-way power-combining structure is developed, which combines the transistors and transfers the impedances simultaneously. The design methodology of the dc bias network is also presented to feed the high dc current into the multi-way combining structure under the geometric limitation. Based on these techniques, this power amplifier achieves saturation power 18 dBm with 12.5-dB small signal gain. To the authors' knowledge, this power amplifier achieves the highest output power among the reported CMOS PAs at this frequency.

Original languageEnglish
Title of host publication2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013
DOIs
StatePublished - 1 Dec 2013
Event2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013 - Seattle, WA, United States
Duration: 2 Jun 20137 Jun 2013

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X

Conference

Conference2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013
CountryUnited States
CitySeattle, WA
Period2/06/137/06/13

Keywords

  • CMOS power amplifier
  • Power combining
  • W-band

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