A 75-110 GHz digitally-probed artificial dielectric phase demodulator in 65nm CMOS

A. Tang*, G. Virbila, T. LaRocca, Mau-Chung Chang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

This paper introduces the Digitally Probed Artificial Dielectric (DiPAD) demodulator: a direct carrier frequency and phase demodulator that operates by digitally detecting the voltage standing-wave response of periodically loaded transmission lines with CMOS sensors. The proposed demodulator allows for the direct demodulation of phase or frequency encoded signals without the need for an analog to digital converter, enabling the construction of a simpler, more power efficient mm-wave receiver. The proposed DiPAD demodulator was implemented in 65nm CMOS technology and operates at carrier frequencies up to 110 GHz, while consuming only 0.47mW of DC power and occupying only 0.16mm2 of silicon area.

Original languageEnglish
Title of host publication2011 IEEE MTT-S International Microwave Symposium, IMS 2011
DOIs
StatePublished - 7 Sep 2011
Event2011 IEEE MTT-S International Microwave Symposium, IMS 2011 - Baltimore, MD, United States
Duration: 5 Jun 201110 Jun 2011

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X

Conference

Conference2011 IEEE MTT-S International Microwave Symposium, IMS 2011
CountryUnited States
CityBaltimore, MD
Period5/06/1110/06/11

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    Tang, A., Virbila, G., LaRocca, T., & Chang, M-C. (2011). A 75-110 GHz digitally-probed artificial dielectric phase demodulator in 65nm CMOS. In 2011 IEEE MTT-S International Microwave Symposium, IMS 2011 [5972572] (IEEE MTT-S International Microwave Symposium Digest). https://doi.org/10.1109/MWSYM.2011.5972572