A 71-80 GHz medium power amplifier using 4-mil 0.15-m GaAs-PHEMT technology

Zuo-Min Tsai *, Kun You Lin, Huei Wang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

A matching network with benefit of realization and wide bandwidth for millimeter-wave power amplifiers is proposed. With the proposed matching network, the characteristic impedance of the λ/4 transformersare increased and the length of the λ/4 transformers are reduced. A 71-80 GHz medium power power amplifier using 4-mil 0.15-μm HEMT is demonstrated based on the proper matching network. A 18.8-dBm output power with 10.7% peak PAE has been achieved and reveals that this matching is suitable for millimeter-wave power amplifier designs.

Original languageEnglish
Title of host publicationAsia-Pacific Microwave Conference Proceedings, APMC 2011
Pages1130-1133
Number of pages4
StatePublished - 1 Dec 2011
EventAsia-Pacific Microwave Conference, APMC 2011 - Melbourne, VIC, Australia
Duration: 5 Dec 20118 Dec 2011

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC

Conference

ConferenceAsia-Pacific Microwave Conference, APMC 2011
CountryAustralia
CityMelbourne, VIC
Period5/12/118/12/11

Keywords

  • GaAs
  • HEMT
  • monolithic microwave integrated circuit (MMIC)
  • Power amplifier

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