A 71-76 GHz chip set for wireless communication in 65-nm CMOS technology

Jhe Jia Kuo*, Wei Heng Lin, Che Chun Kuo, Jeffrey Ronald Tseng, Zuo-Min Tsai , Kun You Lin, Huei Wang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Scopus citations

Abstract

This paper presents a chip set of RF front-end circuits using 65-nm CMOS technology. The chip set includes a LNA, a down-conversion mixer, an up-conversion mixer and a medium power amplifier. The LNA has the 3-dB bandwidth from 68 to 75 GHz with a peak value of 17 dB. The down-conversion mixer has a conversion loss of better than -5 dB from 53 to 73 GHz at 4 dBm LO power. The up-conversion mixer has a conversion loss better than -5 dB from 53 to 75 GHz at 6 dBm LO power. The medium power amplifier delivers 5 dBm P 1dB and 6.7 dBm P sat at 71 GHz. These results show the potential of the 65-nm CMOS technology in high frequency circuit design.

Original languageEnglish
Title of host publicationIMS 2009 - 2009 IEEE MTT-S International Microwave Symposium Digest
Pages189-192
Number of pages4
DOIs
StatePublished - 1 Dec 2009
Event2009 IEEE MTT-S International Microwave Symposium, IMS 2009 - Boston, MA, United States
Duration: 7 Jun 200912 Jun 2009

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X

Conference

Conference2009 IEEE MTT-S International Microwave Symposium, IMS 2009
CountryUnited States
CityBoston, MA
Period7/06/0912/06/09

Keywords

  • CMOS
  • Low noise amplifier
  • Mixer
  • Power amplifier

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    Kuo, J. J., Lin, W. H., Kuo, C. C., Tseng, J. R., Tsai , Z-M., Lin, K. Y., & Wang, H. (2009). A 71-76 GHz chip set for wireless communication in 65-nm CMOS technology. In IMS 2009 - 2009 IEEE MTT-S International Microwave Symposium Digest (pp. 189-192). [5165664] (IEEE MTT-S International Microwave Symposium Digest). https://doi.org/10.1109/MWSYM.2009.5165664